STB8NM60D STMicroelectronics

STB8NM60D STP8NM60D 2 N-CHANNEL 600V - 0.9 - 8A - TO-220/D PAK Fast Diode MDmesh Power MOSFET General features Type V R I P DSS DS(on) D TOT STB8NM60D 600V < 1.0 8A 100W STP8NM60D 600V < 1.0 8A 100W High dv/dt and avalanche capabilities 3 3 2 1 1 100% avalanche rated DPAK TO-220 Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode Description The FDmesh associates all advantages of Internal schematic diagram reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Applications The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Order codes Sales Type Marking Package Packaging STB8NM60D B8NM60D DPAK TAPE & REEL STP8NM60D P8NM60D TO-220 TUBE February 2006 Rev2 1/13 www.st.com 13Electrical ratings STB8NM60D - STP8NM60D 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-Source Voltage (V = 0) 600 V DS GS V Drain-gate Voltage (R = 20k)600 V DGR GS V Gate-Source Voltage 30 V GS I Drain Current (continuous) at T = 25C 8 A D C I Drain Current (continuous) at T =100C 5 A D C (1) I Drain Current (pulsed) 32 A DM P Total Dissipation at T = 25C 100 W TOT C Derating Factor 0.8 W/C (2) dv/dt Peak Diode Recovery voltage slope 20 V/ns T Operating Junction Temperature J -65 to 150 C Storage Temperature T stg 1. Pulse width limited by safe operating area 2. I 5A, di/dt 400A/s, V =80%V SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 1.25 C/W thj-case R Thermal resistance junction-ambient Max 62.5 C/W thj-amb Maximum lead temperature for soldering T 300 C l purpose Table 3. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not I 2.5 A AR repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting E 200 mJ AS Tj=25C, I =I , V =50V) D AR DD 2/13 Rev2