X-On Electronics has gained recognition as a prominent supplier of STB9NK80Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB9NK80Z MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB9NK80Z STMicroelectronics

STB9NK80Z electronic component of STMicroelectronics
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Part No.STB9NK80Z
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-CH 800V 1.5Ohm typ 5.2A Zener-protected
Datasheet: STB9NK80Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.8021 ea
Line Total: USD 802.1 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.9744
2000 : USD 1.9662
3000 : USD 1.9579
4000 : USD 1.9496
5000 : USD 1.9412
10000 : USD 1.9326
20000 : USD 1.9239
25000 : USD 1.915
50000 : USD 1.9062

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.4956

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0749
10 : USD 4.3965
100 : USD 3.5349
500 : USD 2.9042

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0749
10 : USD 4.3965
100 : USD 3.5349
500 : USD 2.9042

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.156
10 : USD 2.2248
25 : USD 2.0952
100 : USD 1.7928
500 : USD 1.4688
1000 : USD 1.2096

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.8021

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STB9NK80Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB9NK80Z and other electronic components in the MOSFETs category and beyond.

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STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 typ., 5.2 A SuperMESH Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB9NK80Z 800 V 1.8 5.2 A 2 3 1 AEC-Q101 qualified 100% avalanche tested DPAK Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB9NK80Z Product summary Order code STB9NK80Z Marking B9NK80Z Package DPAK Packing Tape and reel DS9606 - Rev 3 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB9NK80Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 800 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 5.2 A D C I Drain current (continuous) at T = 100 C 3.3 A D C (1) I Drain current (pulsed) 20.8 A DM P Total power dissipation at T = 25 C 125 W TOT C ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 4 kV (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 5.2 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 5.2 A AR (2) E Single pulse avalanche energy 210 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS9606 - Rev 3 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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