STB9NK80Z STMicroelectronics

STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 typ., 5.2 A SuperMESH Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB9NK80Z 800 V 1.8 5.2 A 2 3 1 AEC-Q101 qualified 100% avalanche tested DPAK Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB9NK80Z Product summary Order code STB9NK80Z Marking B9NK80Z Package DPAK Packing Tape and reel DS9606 - Rev 3 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB9NK80Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 800 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 5.2 A D C I Drain current (continuous) at T = 100 C 3.3 A D C (1) I Drain current (pulsed) 20.8 A DM P Total power dissipation at T = 25 C 125 W TOT C ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 4 kV (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 5.2 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 5.2 A AR (2) E Single pulse avalanche energy 210 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS9606 - Rev 3 page 2/17