STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z 2 2 N-CHANNEL 700V - 1 - 7.5A TO-220/FP/D PAK/I PAK/TO-247 Zener-Protected SuperMESHPower MOSFET TYPE V R I Pw DSS DS(on) D STP9NK70Z 700 V < 1.2 7.5 A 115 W STP9NK70ZFP 700 V < 1.2 7.5 A 35 W STB9NK70Z 700 V < 1.2 7.5 A 115 W STB9NK70Z-1 700 V < 1.2 7.5 A 115 W 3 STW9NK70Z 700 V < 1.2 7.5 A 156 W 2 1 3 2 TYPICAL R (on) = 1.0 DS TO-220 1 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY TO-247 IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES 1 3 2 1 VERY GOOD MANUFACTURING 2 2 I PAK D PAK REPEATIBILITY DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE TUBE 2 STB9NK70Z B9NK70Z D PAK (ONLY UNDER REQUEST) 2 STB9NK70ZT4 B9NK70Z TAPE & REEL D PAK 2 STB9NK70Z-1 B9NK70Z-1 TUBE I PAK STW9NK60Z W9NK70Z TO-247 TUBE April 2002 1/14STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TO-220 / TO-220FP TO-247 2 2 D PAK / I PAK V Drain-source Voltage (V = 0) 700 V DS GS V Drain-gate Voltage (R = 20 k) 700 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 7.5 7.5 (*) 7.5 A D C I Drain Current (continuous) at T = 100C 4.7 4.7 (*) 4.7 A D C I (l) Drain Current (pulsed) 30 30 (*) 30 A DM P Total Dissipation at T = 25C 115 35 156 W TOT C Derating Factor 0.92 0.28 1.25 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 4000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 V ISO T Operating Junction Temperature C j -55 to 150 T Storage Temperature -55 to 150 C stg ( l) Pulse width limited by safe operating area (1) I 7.5A, di/dt 200 A, V V , T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 2 TO-220FP TO-247 D PAK 2 I PAK Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 C/W Thermal Resistance Junction-pcb Max Rthj-pcb 30 C/W (When mounted on minimum Footprint) Rthj-amb Thermal Resistance Junction-ambient Max 62.5 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 7.5 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 230 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14