STB80N20M5, STP80N20M5 Datasheet N-channel 200 V, 15 m, 65 A, MDmesh M5 Power MOSFETs 2 in D PAK and TO 220 packages Features V R max. I Order codes DS DS(on) D TAB TAB STB80N20M5 200 V 20 m 65 A STP80N20M5 3 1 3 2 Extremely low R DS(on) D PAK TO-220 2 1 Low gate charge and input capacitance Excellent switching performance 100% avalanche tested D(2, TAB) Applications Switching applications G(1) Description These devices are N-channel Power MOSFETs based on the MDmesh M5 S(3) innovative vertical process technology combined with the well-known PowerMESH AM01475v1 noZen horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB80N20M5 STP80N20M5 Product summary Order code: STB80N20M5 Marking 80N20M5 2 Package D PAK Packing Tape and reel Order code: STP80N20M5 Marking 80N20M5 Package TO-220 Packing Tube DS6286 - Rev 3 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB80N20M5, STP80N20M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 65 A C I D Drain current (continuous) at T = 100 C 41 A C (1) I Drain current (pulsed) 232 A DM P Total power dissipation at T = 25 C 190 W TOT C I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 20 A AR Jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 500 mJ AS j D AR DD (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 65 A, di/dt 400 A/s, V < V SD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220 D PAK R Thermal resistance junction-case 0.66 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb R Thermal resistance junction-pcb 30 C/W thj-pcb DS6286 - Rev 3 page 2/17