STB5NK50ZT4 STMicroelectronics

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP 2 2 N-CHANNEL 500V - 1.22 - 4.4A TO-220/FP-D/IPAK-D /I PAK Zener-Protected SuperMESHMOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D STB5NK50Z 500 V < 1.5 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 4.4 A 70 W STD5NK50Z 500 V < 1.5 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 4.4 A 70 W 3 2 1 3 STP5K50Z 500 V < 1.5 4.4 A 70 W 2 1 STP5K50ZFP 500 V < 1.5 4.4 A 25 W 2 TO-220FP I PAK TO-220 TYPICAL R (on) = 1.22 DS EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED 3 3 3 GATE CHARGE MINIMIZED 2 1 1 1 VERY LOW INTRINSIC CAPACITANCES IPAK 2 DPAK D PAK VERY GOOD MANUFACTURING REPEATIBILITY Figure 2: Internal Schematic Diagram DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING 2 STB5NK50ZT4 B5NK50Z TAPE & REEL D PAK 2 STB5NK50Z-1 B5NK50Z TUBE I PAK STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL STD5NK50Z-1 D5NK50Z IPAK TUBE STP5NK50Z P5NK50Z TO-220 TUBE STP5NK50ZFP P5NK50ZFP TO-220FP TUBE Rev. 2 September 2005 1/17STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Table 3: Absolute Maximum ratings Symbol Parameter Value Unit STP5NK50Z STD5NK50Z STP5NK50ZFP STB5NK50Z/-1 STD5NK50Z-1 V Drain-source Voltage (V = 0) 500 V DS GS V Drain-gate Voltage (R = 20 k ) DGR GS 500 V V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 4.4 4.4 (*) 4.4 A D C I Drain Current (continuous) at T = 100C 2.7 2.7 (*) 2.7 A D C I ( ) Drain Current (pulsed) 17.6 17.6 (*) 17.6 A DM P Total Dissipation at T = 25C 70 25 70 W TOT C Derating Factor 0.56 0.2 0.56 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 3000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 - V ISO T j Operating Junction Temperature -55 to 150 C T Storage Temperature -55 to 150 C stg ( ) Pulse width limited by safe operating area (1) I 4.4A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 TO-220FP DPAK 2 2 I PAK/D PAK Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T 300 C Maximum Lead Temperature For Soldering Purpose l Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 4.4 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 130 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/17