X-On Electronics has gained recognition as a prominent supplier of STD110N8F6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD110N8F6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD110N8F6 STMicroelectronics

STD110N8F6 electronic component of STMicroelectronics
STD110N8F6 STMicroelectronics
STD110N8F6 MOSFETs
STD110N8F6  Semiconductors

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See Product Specifications
Part No. STD110N8F6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Datasheet: STD110N8F6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
47: USD 1.3919 ea
Line Total: USD 65.42 
Availability - 1457
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 47  Multiples: 1
Pack Size: 1
Availability Price Quantity
1457
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 47
Multiples : 1
47 : USD 1.3919
55 : USD 1.1793
56 : USD 1.1664
100 : USD 1.0067
250 : USD 0.9966
500 : USD 0.9259
1000 : USD 0.8935

2425
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 2500
Multiples : 2500
2500 : USD 1.6388

1457
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 55
Multiples : 1
55 : USD 1.1793
56 : USD 1.1664
100 : USD 1.0067
250 : USD 0.9966
500 : USD 0.9259
1000 : USD 0.8935

   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the STD110N8F6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD110N8F6 and other electronic components in the MOSFETs category and beyond.

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STD110N8F6 N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT % STD110N8F6 80 V 0.0065 80 A 167 W Very low on-resistance Very low gate charge High avalanche ruggedness . 3 Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) * packages. 6 0 Y Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube December 2014 DocID027274 Rev 1 1/16 This is information on a product in full production. www.st.com 7 Contents STD110N8F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 13 6 Revision history . 15 2/16 DocID027274 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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