X-On Electronics has gained recognition as a prominent supplier of STD120N4F6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD120N4F6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD120N4F6 STMicroelectronics

Name: STD120N4F6
Brand: STMicroelectronics
SKU: STD120N4F6_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STD120N4F6 electronic component of STMicroelectronics

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Part No.	STD120N4F6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
Datasheet:	STD120N4F6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.6286 ea
Line Total: USD 1.63

Availability - 1603
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

STD120N4F6 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1603

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 1
Multiples : 1

1 : USD 1.6286
10 : USD 1.336
30 : USD 0.9179
100 : USD 0.805
500 : USD 0.7374
1000 : USD 0.7035

87

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 37
Multiples : 1

37 : USD 1.7723
45 : USD 1.435
60 : USD 1.0757

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

80 A 80 A

Vds - Drain-Source Breakdown Voltage

40 V 40 V

Rds On - Drain-Source Resistance

4 mOhms 4 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

4 V 4 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

110 W 110 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

DPAK DPAK

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

65 nC 65 nC

Qualification

Aec - Q101 Aec - Q101

Tradename

Stripfet Stripfet

Configuration

Single Single

Series

Std120n4f6 Std120n4f6

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

80 A 80 A

Drain-Source Breakdown Voltage

40 V 40 V

Gate-Source Breakdown Voltage

20 V 20 V

Power Dissipation

110 W 110 W

Rds On

4 Mohms 4 Mohms

Gate Charge Qg

65 nC 65 nC

Factory Pack Quantity :

2500 2500

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

STD120N4F6 Alternative Parts

We are delighted to provide the STD120N4F6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD120N4F6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 m typ., 80 A STripFET F6 Power MOSFETs in DPAK and DPAK packages Datasheet - production data Features Order codes V R max. I DS DS(on) D STB120N4F6 40 V 4 m 80 A TAB STD120N4F6 40 V 4 m 80 A TAB Designed for automotive applications and 3 3 AEC-Q101 qualified 1 1 Very low on-resistance DPAK DPAK Very low gate charge High avalanche ruggedness Low gate drive power loss Application Figure 1. Internal schematic diagram Switching applications % RU 7 Description These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET DeepGATE technology, with a new gate * structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STB120N4F6 DPAK 120N4F6 Tape and reel STD120N4F6 DPAK September 2015 DocID17042 Rev 6 1/19 This is information on a product in full production. www.st.comContents STB120N4F6, STD120N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 2 4.1 D PAK (TO-263) type A package information 9 4.2 DPAK (TO-252) type A2 package information . 12 5 Packaging mechanical data 15 6 Revision history . 18 2/19 DocID17042 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1603 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 1.6286 10 : USD 1.336 30 : USD 0.9179 100 : USD 0.805 500 : USD 0.7374 1000 : USD 0.7035

87 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 37 Multiples : 1	37 : USD 1.7723 45 : USD 1.435 60 : USD 1.0757

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Hot	STD12N60M2 MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Hot	STD12N65M5 MOSFET POWER MOSFET N-CH 650V Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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