X-On Electronics has gained recognition as a prominent supplier of STD127DT4 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STD127DT4 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STD127DT4 STMicroelectronics

STD127DT4 electronic component of STMicroelectronics
STD127DT4 STMicroelectronics
STD127DT4 Bipolar Transistors - BJT
STD127DT4  Semiconductors

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See Product Specifications
Part No. STD127DT4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor
Datasheet: STD127DT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.097
10 : USD 0.9709
100 : USD 0.7561
500 : USD 0.6083
1000 : USD 0.4967
N/A

0
MOQ : 1
Multiples : 1
1 : USD 2.206
10 : USD 0.8084
100 : USD 0.5946
500 : USD 0.4703
1000 : USD 0.376
2500 : USD 0.354
N/A

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the STD127DT4 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD127DT4 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STD127DT4 High voltage fast-switching NPN power transistor Datasheet - production data Features NPN transistor High voltage capability TAB Low spread of dynamic parameters 3 Minimum lot-to-lot spread for reliable operation 1 Very high switching speed Integrated anti-parallel collector - emitter diode DPAK Applications Electronic ballast for fluorescent lighting Fly back and forward single transistor low power converters Figure 1. Internal schematic diagram Description C (2 or tab) This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar B (1) edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. E (3) Table 1. Device summary Part number Marking Package Packaging STD127DT4 D127D DPAK Tape and reel November 2013 DocID025553 Rev 1 1/14 This is information on a product in full production. www.st.comContents STD127DT4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 7 4 Package mechanical data . 8 5 Packing mechanical data 11 6 Revision history . 13 2/14 DocID025553 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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