STD12N65M2 STMicroelectronics

STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (C ) profile OSS DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing Tape and STD12N65M2 12N65M2 DPAK reel February 2015 DocID027317 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STD12N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information................................... 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027317 Rev 2