STD13003T4 STMicroelectronics

STD13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 1 1 SURFACE-MOUNTING DPAK (TO-252) 2 3 3 POWER PACKAGE IN TAPE & REEL (SuffixT4 ) THROUGH-HOLE IPAK (TO-251) POWER IPAK DPAK PACKAGE IN TUBE (Suffix-1 ) TO-251 TO-252 (Suffix-1 ) (SuffixT4 ) APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 700 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage BV V EBO EBO o (IC = 0, IB = 0.75 A, tp < 10s, Tj < 150 C) IC Collector Current 1.5 A I Collector Peak Current (t < 5 ms) 3 A CM p I Base Current 0.75 A B I Base Peak Current (t < 5 ms) 1.5 A BM p o P Total Dissipation at T = 25 C20 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/8 September 2001 STD13003 THERMAL DATA o R Thermal Resistance Junction-case Max 6.25 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700V 1 mA CEV CE o Current (V = -1.5V) V = 700V T = 125 C 5 mA BE CE j BV Emitter-Base I = 10 mA 9 18 V EBO E Breakdown Voltage (I = 0) C V * Collector-Emitter I = 10 mA 400 V CEO(sus) C Sustaining Voltage L = 25 mH (I = 0) B V * Collector-Emitter I = 0.5 A I = 0.1 A 0.5 V CE(sat) C B Saturation Voltage IC = 1 A IB = 0.25 A 1 V I = 1.5 A I = 0.5 A 3 V C B V * Base-Emitter I = 0.5 A I = 0.1 A 1 V BE(sat) C B Saturation Voltage IC = 1 A IB = 0.25 A 1.2 V h * DC Current Gain I = 0.5 A V = 2 V FE C CE Group A 8 20 Group B 15 35 I = 1 A V = 2 V 5 25 C CE RESISTIVE LOAD t Rise Time I = 1 A V = 125 V 1 s r C CC t Storage Time I = 0.2 A I = -0.2 A 4 s s B1 B2 t Fall Time 0.7 s f T = 25 s p INDUCTIVE LOAD I = 1 A I = 0.2 A C B1 t Storage Time V = -5 V L = 50 mH 0.8 s s BE V = 300 V clamp * Pulsed: Pulse duration = 300s, duty cycle = 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/8