STD12NF06LT4 Datasheet N-channel 60 V, 70 m typ., 12 A, StripFET II Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD12NF06LT4 60 V 90 m 12 A 3 2 1 Exceptional dv/dt capability DPAK 100% avalanche tested Low gate charge D(2, TAB) Applications Switching applications G(1) Description This Power MOSFET series has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance S(3) and gate charge. This renders the device suitable for use as primary switch in AM01475v1 noZen advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD12NF06LT4 Product summary Order code STD12NF06LT4 Marking D12NF06L Package DPAK Packing Tape and reel DS10434 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD12NF06LT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 16 V GS Drain current (continuous) at T = 25 C 12 case I A D Drain current (continuous) at T = 100 C 8.5 case (1) I Drain current (pulsed) 48 A DM P Total dissipation at T = 25 C 30 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) E Single pulse avalanche energy 100 mJ AS T Storage temperature range stg -55 to 175 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 12 A, di/dt 200 A/s, V 40 V, T T SD DS J JMAX 3. Starting T = 25 C, I = 6 A, V = 30 V j D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. DS10434 - Rev 3 page 2/19