STD13N50DM2AG Datasheet Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on ) D STD13N50DM2AG 500 V 360 m 11 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) NG1D2TS3Z Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel DS12210 - Rev 4 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD13N50DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 11 D C A I Drain current (continuous) at T = 100 C 8 D C (1) I Drain current (pulsed) 28 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 11 A, di/dt 800 A/s V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 400 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 oz Cu board Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not repetetive I 2 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 230 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12210 - Rev 4 page 2/16