STD140N6F7 STMicroelectronics

STD140N6F7 Datasheet N-channel 60 V, 3.1 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Features V R max. I P Order code TAB DS DS(on) D TOT STD140N6F7 60 V 3.8 m 80 A 134 W 3 2 1 Among the lowest R on the market DS(on) DPAK Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss D(2, TAB) High avalanche ruggedness Applications Switching applications G(1) Description S(3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced AM01475v1 noZen trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STD140N6F7 Product summary Order code STD140N6F7 Marking 140N6F7 Package DPAK Packing Tape and reel DS11454 - Rev 3 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD140N6F7 STD140N6F7 electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 case (1) I A D Drain current (continuous) at T = 100 C 80 case (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 134 W TOT case (3) E Single pulse avalanche energy 200 mJ AS (4) dv/dt Drain-body diode dynamic dv/dt ruggedness 7.1 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current is limited by package. 2. Pulse width is limited by safe operating area. 3. starting T = 25 C, I = 20 A, V = 30 V. j D DD 4. I = 80 A di/dt = 600 A/s V = 48 V T < T SD DD j jmax Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb 50 thj-pcb C/W R Thermal resistance junction-case 1.12 thj-c 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 s. DS11454 - Rev 3 page 2/17