FDD86369_F085 N-Channel PowerTrench MOSFET
May 2015
FDD86369_F085
N-Channel PowerTrench MOSFET
80 V, 90 A, 7.9 m
Features
Typical R = 5.9 m at V = 10V, I = 80 A
DS(on) GS D
D
Typical Q = 34 nC at V = 10V, I = 80 A
g(tot) GS D
UIS Capability
RoHS Compliant
D
Qualified to AEC Q101 G
G
Applications
S
D-PAK
Automotive Engine Control
TO-252
S
(TO-252)
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Forcurrentpackagedrawing,pleaserefertotheFairchildweb
Primary Switch for 12V Systems
siteat
FDD86369_F085 N-Channel PowerTrench MOSFET
Electrical Characteristics T = 25C unless otherwise noted.
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Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
B Drain-to-Source Breakdown Voltage I = 250A, V = 0V 80 - - V
VDSS D GS
o
V = 80V, T = 25 C - - 1 A
DS J
I Drain-to-Source Leakage Current
DSS
o
V = 0V T = 175 C (Note 4) - - 1 mA
GS J
I Gate-to-Source Leakage Current V = 20V - - 100 nA
GSS GS
On Characteristics
V Gate to Source Threshold Voltage V = V , I = 250A 2.0 2.7 4.0 V
GS(th) GS DS D
o
T = 25 C - 5.9 7.9 m
I = 80A,
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D
R Drain to Source On Resistance
DS(on)
o
V = 10V
T = 175 C (Note 4) - 13.0 17.4 m
GS
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Dynamic Characteristics
C Input Capacitance - 2530 - pF
iss
V = 40V, V = 0V,
DS GS
C Output Capacitance - 430 - pF
oss
f = 1MHz
C Reverse Transfer Capacitance - 16 - pF
rss
R Gate Resistance V = 0.5V, f = 1MHz - 2.2 -
g GS
Q Total Gate Charge V = 0 to 10V -36 54 nC
g(ToT) GS
V = 64V
DD
Q Threshold Gate Charge V = 0 to 2V - 4.6 - nC
I = 80A
g(th) GS
D
Q Gate-to-Source Gate Charge -13 - nC
gs
Q Gate-to-Drain Miller Charge - 8.5 - nC
gd
Switching Characteristics
t Turn-On Time - - 70 ns
on
t Turn-On Delay - 13 - ns
d(on)
t Rise Time - 34 - ns
V = 40V, I = 80A,
r
DD D
V = 10V, R = 6
t Turn-Off Delay - 22 - ns
GS GEN
d(off)
t Fall Time - 9 - ns
f
t Turn-Off Time - - 46 ns
off
Drain-Source Diode Characteristics
I =80A, V = 0V - - 1.25 V
SD GS
V Source-to-Drain Diode Voltage
SD
I = 40A, V = 0V - - 1.2 V
SD GS
t Reverse-Recovery Time -49 64 ns
rr
I = 80A, dI /dt = 100A/s
F SD
Q Reverse-Recovery Charge - 40 53 nC
rr
Note:
4: The maximum value is specified by design at T = 175C. Product is not tested to this condition in production.
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2015 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDD86369_F085 Rev. 1.0