X-On Electronics has gained recognition as a prominent supplier of NVB110N65S3F MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVB110N65S3F MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVB110N65S3F ON Semiconductor

NVB110N65S3F electronic component of ON Semiconductor
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Part No.NVB110N65S3F
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SUPERFET3 650V D2PAK PKG
Datasheet: NVB110N65S3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.5494 ea
Line Total: USD 6.55 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 6.5494
10 : USD 5.7846
30 : USD 4.7639
100 : USD 4.3719

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 10.1277
10 : USD 6.6312
25 : USD 6.264
100 : USD 5.4324
500 : USD 4.6224
800 : USD 3.9096

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVB110N65S3F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVB110N65S3F and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single N-Channel, D2PAK 650 V, 110 m , 30 A NVB110N65S3F Description SUPERFET III MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX conduction loss, provide superior switching performance, and (BR)DSS DS(ON) D withstand extreme dv/dt rate. 650 V 110 m 10 V 30 A Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery D performance of body diode can remove additional component and improve system reliability. Features 700 V T = 150C J G Typ. R = 93 m DS(on) Ultra Low Gate Charge (Typ. Q = 58 nC) g S Low Effective Output Capacitance (Typ. C = 533 pF) oss(eff.) NCHANNEL MOSFET 100% Avalanche Tested Qualified with AECQ101 These Devices are PbFree and are RoHS Compliant D Typical Applications G Automotive On Board Charger S 2 D PAK3 Automotive DC/DC Converter for HEV TO263 CASE 418AJ MARKING DIAGRAM &Z&3&K NVB 110N65S3F &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVB110N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2020 Rev. 5 NVB110N65S3F/DNVB110N65S3F Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C Symbol Parameter Value Unit V DraintoSource Voltage 650 V DSS V GatetoSource Voltage DC 30 V GS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 30 A D C Continuous (T = 100C) 19.5 C I Drain Current Pulsed (Note 1) 69 A DM E Single Pulse Avalanche Energy (Note 2) 380 mJ AS I Avalanche Current 3.5 A AS E Repeated Avalanche Energy (Note 1) 2.4 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation TC = 25C 240 W D Derate Above 25C 1.92 W/C T , T Operating Junction and Storage Temperature 55 to 150 C J stg T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 3.5 A, RG = 25 , starting T = 25C. J 3. ISD 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. DD C Table 2. THERMAL RESISTANCE RATINGS Symbol Parameter Max Unit R Thermal Resistance, JunctiontoCase, Max. 0.52 C/W JC R Thermal Resistance, JunctiontoAmbient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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