MOSFET - Single N-Channel 150 V, 4.1 m , 185 A NVBGS4D1N15MC Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com Lowers Switching Noise/EMI AECQ101 Qualified and PPAP Capable V R MAX I MAX These Devices are PbFree, Halogen Free/BFR Free and are RoHS (BR)DSS DS(ON) D Compliant 4.1 m 10 V 150 V 185 A 4.7 m 8 V Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling D (TAB) BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G (Pin 1) DraintoSource Voltage V 150 V DSS S (Pins 2,3,4,5,6,7) GatetoSource Voltage V 20 V GS NCHANNEL MOSFET Continuous Drain I 185 A D Current R JC Steady (Note 2) T = 25C C State MARKING Power Dissipation P 316 W D DIAGRAM R (Note 2) JC Continuous Drain I 20 A D Current R JA XXXXXXXXX (Notes 1, 2) Steady T = 25C A AYWWG State 2 D PAK7 Power Dissipation P 3.7 W D R (Notes 1, 2) CASE 418AY JA Pulsed Drain Current T = 25C, t = 10 s I 2564 A A p DM XXXX = Specific Device Code Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location Range +175 Y = Year WW = Work Week Source Current (Body Diode) I 263 A S G = PbFree Package Single Pulse DraintoSource Avalanche E 332 mJ AS Energy (I = 81.5 A , L = 0.1 mH) L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be 2 assumed, damage may occur and reliability may be affected. NVBGS4D1N15MC D PAK7 800 / Tape & 2 1. Surfacemounted on FR4 board using a 1 in , 1 oz. Cu pad. Reel (PbFree) 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 0 NVBGS4D1N15MC/DNVBGS4D1N15MC THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 0.5 C/W JC JunctiontoAmbient Steady State (Note 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 150 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 20.28 mV/C (BR)DSS J I = 250 A, referenced to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 120 V DS T = 125C 10 A J GatetoSource Leakage Current I V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 574 A 2.5 3.5 4.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 10.21 mV/C GS(TH) J I = 250 A, referenced to 25C D Coefficient DraintoSource On Resistance R V = 10 V, I = 104 A 3.3 4.1 m DS(on) GS D V = 8 V, I = 52 A 3.5 4.7 GS D Forward Transconductance g V = 5 V, I = 90 A 10.9 S FS DS D GateResistance R T = 25C 1.2 G A CHARGES & CAPACITANCES pF Input Capacitance C 7285 ISS Output Capacitance C 2025 V = 0 V, f = 1 MHz, V = 75 V OSS GS DS Reverse Transfer Capacitance C 10.6 RSS Total Gate Charge Q 88.9 nC G(TOT) Threshold Gate Charge Q 22.8 G(TH) V = 10 V, V = 75 V, GS DS I = 104 A D GatetoSource Charge Q 37.5 GS GatetoDrain Charge Q 13.0 GD Output Charge Q V = 0 V, V = 75 V 272 nC OSS GS DS SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) TurnOn Delay Time t 49 ns d(ON) Rise Time t 38 r V = 10 V, V = 75 V, GS DS I = 104 A, R = 6 D G TurnOff Delay Time t 64 d(OFF) Fall Time t 10 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V V = 0 V, I = 104 A, T = 25C 0.88 1.2 SD GS S J V = 0 V, I = 104 A, T = 125C 0.79 GS S J Reverse Recovery Time t 89 ns RR Charge Time t 47 a V = 0 V, I = 104 A, GS S dI /dt = 100 A/ s S Discharge Time t 42 b Reverse Recovery Charge Q 164 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperature www.onsemi.com 2