NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 m Features www.onsemi.com Typical R = 0.46 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 220 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS T = 25C unless otherwise noted J MO299A Parameter Symbol Ratings Units CASE 100CU DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS D (9) Drain Current Continuous (V = 10) I 300 A GS D (Note 1) T = 25C C Pulsed Drain Current T = 25C See C Figure 4 G (1) Single Pulse Avalanche Energy (Note 2) E 1064 mJ AS Power Dissipation P 429 W D Derate Above 25C 2.86 W/C S (28) Operating and Storage Temperature T , T 55 to +175 C J STG Thermal Resistance, JunctiontoCase R 0.35 C/W JC ORDERING INFORMATION Maximum Thermal Resistance, R 43 C/W JA JunctiontoAmbient (Note 3) Device Package Marking Stresses exceeding those listed in the Maximum Ratings table may damage the NVBLS0D5N04M8TXG MO299A 0D5N04M8 device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 0.3 mH, I = 84 A, V = 40 V during inductor charging J AS DD and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2019 Rev. 0 NVBLS0D5N04M8/DNVBLS0D5N04M8 Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 40 V VDSS D GS DraintoSource Leakage Current V = 40 V, T = 25C 1 I A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D R DraintoSource On Resistance I = 80 A, V = 10 V T = 25C 0.46 0.57 m DS(on) D GS J DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1 MHz 15900 pF iss DS GS C Output Capacitance 4000 pF oss C Reverse Transfer Capacitance 600 pF rss R Gate Resistance f = 1 MHz 2.6 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 20 V 220 296 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 29 39 nC g(th) GS Q GatetoSource Gate Charge 73 nC gs Q GatetoDrain Miller Charge 41 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 20 V, I = 80 A, 221 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 54 ns d(on) t Rise Time 82 ns r t TurnOff Delay 106 ns d(off) t Fall Time 52 ns f t TurnOff Time 215 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time 119 133 ns I = 80 A, dI /d = 100 A/ s, rr F SD t V = 32 V DD Q ReverseRecovery Charge 228 274 nC rr 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2