NTB60N06, NVB60N06 MOSFET Power, 2 N-Channel, D PAK 60 V, 60 A Designed for low voltage, high speed switching applications in NTB60N06, NVB60N06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 2) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 72.3 GS D Temperature Coefficient (Positive) 69.8 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.85 4.0 DS GS D Threshold Temperature Coefficient (Negative) 8.0 mV/C Static DraintoSource OnResistance (Note 2) R m DS(on) (V = 10 Vdc, I = 30 Adc) 11.5 14 GS D Static DraintoSource OnVoltage (Note 2) V Vdc DS(on) (V = 10 Vdc, I = 60 Adc) 0.715 1.01 GS D (V = 10 Vdc, I = 30 Adc, T = 150C) 1.43 GS D J Forward Transconductance (Note 2) (V = 8.0 Vdc, I = 12 Adc) g 35 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 2300 3220 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 660 925 oss f = 1.0 MHz) Transfer Capacitance C 144 300 rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 25.5 50 ns d(on) Rise Time t 180.7 360 r (V = 30 Vdc, I = 60 Adc, DD D V = 10 Vdc, R = 9.1 ) (Note 2) GS G TurnOff Delay Time t 94.5 200 d(off) Fall Time t 142.5 300 f Gate Charge Q 62 81 nC T (V = 48 Vdc, I = 60 Adc, DS D Q 10.8 1 V = 10 Vdc) (Note 2) GS Q 29.4 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 60 Adc, V = 0 Vdc) (Note 2) V 0.99 1.05 Vdc S GS SD (I = 45 Adc, V = 0 Vdc, T = 150C) 0.87 S GS J Reverse Recovery Time t 64.9 ns rr (I = 60 Adc, V = 0 Vdc, S GS t 44.1 a dI /dt = 100 A/ s) (Note 2) S t 20.8 b Reverse Recovery Stored Charge Q 0.146 C RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.