NVB5860NLT4G ON Semiconductor

NTB5860NL, NTP5860NL, NVB5860NL N-Channel Power MOSFET 60 V, 220 A, 3.0 m Features NTB5860NL, NTP5860NL, NVB5860NL ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage V /T 6.1 mV/C (BR)DSS J I = 250 A D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 60 V DS V = 0 V T = 125C 100 GS J V = 60 V DS GateSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(th) GS DS D Threshold Temperature Coefficient V /T 7.7 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 20 A 2.4 3.0 m DS(on) GS D V = 4.5 V, I = 20 A 2.8 3.6 GS D Forward Transconductance g V = 15 V, I = 30 A 47 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 13216 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 1127 oss f = 1 MHz Transfer Capacitance C 752 rss Total Gate Charge Q 220 nC G(TOT) Threshold Gate Charge Q 13 G(TH) V = 10 V, V = 48 V, GS DS I = 40 A D GatetoSource Charge Q 37 GS GatetoDrain Charge Q 54 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 25 ns d(on) Rise Time t 58 r V = 10 V, V = 48 V, GS DD I = 100 A, R = 2.5 D G Turn Off Delay Time t 98 d(off) Fall Time t 144 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.76 1.1 V SD J dc V = 0 V GS I = 40 A S T = 125C 0.60 J Reverse Recovery Time t 50 ns rr Charge Time t 25 a V = 0 V, I = 100 A, GS S dI /dt = 20 A/ s S Discharge Time t 25 b Reverse Recovery Stored Charge Q 71 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.