FDD86580-F085 N-Channel PowerTrench MOSFET FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical R = 7.8 m at V = 10V, I = 50 A DS(on) GS D D Typical Q = 20 nC at V = 10V, I = 50 A g(tot) GS D UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted. J Symbol Parameter Ratings Units V Drain-to-Source Voltage 60 V DSS V Gate-to-Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 50 GS C I A D Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 24 mJ AS Power Dissipation 75 W P D o o Derate Above 25C0.5W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance, Junction to Case 2.0 C/W JC o R Maximum Thermal Resistance, Junction to Ambient (Note 3) 52 C/W JA Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 30H, I = 40A, V = 60V during inductor charging and V = 0V during time in avalanche. J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86580 FDD86580-F085 D-PAK(TO-252) 13 16mm 2500units 2016 Semiconductor Components Industries, LLC. 1 Publication Order Number: August-2017, Rev. 2 FDD86580-F085/D FDD86580-F085 N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted. J Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics B Drain-to-Source Breakdown Voltage I = 250A, V = 0V 60 - - V VDSS D GS o V = 60V, T = 25 C - - 1 A DS J I Drain-to-Source Leakage Current DSS o V = 0V T = 175 C (Note 4) - - 1 mA GS J I Gate-to-Source Leakage Current V = 20V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 2.0 3.6 4.2 V GS(th) GS DS D o T = 25 C - 7.8 10 m I = 50A, J D R Drain to Source On Resistance DS(on) o V = 10V T = 175 C (Note 4) - 15.2 19 m GS J Dynamic Characteristics C Input Capacitance - 1430 - pF iss V = 30V, V = 0V, DS GS C Output Capacitance - 440 - pF oss f = 1MHz C Reverse Transfer Capacitance - 25 - pF rss R Gate Resistance V = 0.5V, f = 1MHz - 1.8 - g GS Q Total Gate Charge V = 0 to 10V -20 30 nC g(ToT) GS V = 30V DD Q Threshold Gate Charge V = 0 to 2V - 3 - nC I = 50A g(th) GS D Q Gate-to-Source Gate Charge -9 - nC gs Q Gate-to-Drain Miller Charge - 4 - nC gd Switching Characteristics t Turn-On Time - - 34 ns on t Turn-On Delay - 12 - ns d(on) t Rise Time - 11 - ns V = 30V, I = 50A, r DD D V = 10V, R = 6 t Turn-Off Delay - 15 - ns GS GEN d(off) t Fall Time - 5 - ns f t Turn-Off Time - - 30 ns off Drain-Source Diode Characteristics I = 50A, V = 0V - - 1.25 V SD GS V Source-to-Drain Diode Voltage SD I = 25A, V = 0V - - 1.2 V SD GS t Reverse-Recovery Time -41 61 ns V = 48V, I = 50A, rr DD F dI /dt = 100A/s Q Reverse-Recovery Charge - 30 45 nC SD rr Note: = 175C. Product is not tested to this condition in production. 4: The maximum value is specified by design at T J www.onsemi.com 2