X-On Electronics has gained recognition as a prominent supplier of FDD86580-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD86580-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD86580-F085 ON Semiconductor

FDD86580-F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD86580-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet: FDD86580-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1031 ea
Line Total: USD 1.1 
Availability - 293
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
293
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1031
10 : USD 0.9236
30 : USD 0.8263
100 : USD 0.7156
500 : USD 0.666
1000 : USD 0.6432

   
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We are delighted to provide the FDD86580-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD86580-F085 and other electronic components in the MOSFETs category and beyond.

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FDD86580-F085 N-Channel PowerTrench MOSFET FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical R = 7.8 m at V = 10V, I = 50 A DS(on) GS D D Typical Q = 20 nC at V = 10V, I = 50 A g(tot) GS D UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted. J Symbol Parameter Ratings Units V Drain-to-Source Voltage 60 V DSS V Gate-to-Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 50 GS C I A D Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 24 mJ AS Power Dissipation 75 W P D o o Derate Above 25C0.5W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance, Junction to Case 2.0 C/W JC o R Maximum Thermal Resistance, Junction to Ambient (Note 3) 52 C/W JA Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 30H, I = 40A, V = 60V during inductor charging and V = 0V during time in avalanche. J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86580 FDD86580-F085 D-PAK(TO-252) 13 16mm 2500units 2016 Semiconductor Components Industries, LLC. 1 Publication Order Number: August-2017, Rev. 2 FDD86580-F085/D FDD86580-F085 N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted. J Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics B Drain-to-Source Breakdown Voltage I = 250A, V = 0V 60 - - V VDSS D GS o V = 60V, T = 25 C - - 1 A DS J I Drain-to-Source Leakage Current DSS o V = 0V T = 175 C (Note 4) - - 1 mA GS J I Gate-to-Source Leakage Current V = 20V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 2.0 3.6 4.2 V GS(th) GS DS D o T = 25 C - 7.8 10 m I = 50A, J D R Drain to Source On Resistance DS(on) o V = 10V T = 175 C (Note 4) - 15.2 19 m GS J Dynamic Characteristics C Input Capacitance - 1430 - pF iss V = 30V, V = 0V, DS GS C Output Capacitance - 440 - pF oss f = 1MHz C Reverse Transfer Capacitance - 25 - pF rss R Gate Resistance V = 0.5V, f = 1MHz - 1.8 - g GS Q Total Gate Charge V = 0 to 10V -20 30 nC g(ToT) GS V = 30V DD Q Threshold Gate Charge V = 0 to 2V - 3 - nC I = 50A g(th) GS D Q Gate-to-Source Gate Charge -9 - nC gs Q Gate-to-Drain Miller Charge - 4 - nC gd Switching Characteristics t Turn-On Time - - 34 ns on t Turn-On Delay - 12 - ns d(on) t Rise Time - 11 - ns V = 30V, I = 50A, r DD D V = 10V, R = 6 t Turn-Off Delay - 15 - ns GS GEN d(off) t Fall Time - 5 - ns f t Turn-Off Time - - 30 ns off Drain-Source Diode Characteristics I = 50A, V = 0V - - 1.25 V SD GS V Source-to-Drain Diode Voltage SD I = 25A, V = 0V - - 1.2 V SD GS t Reverse-Recovery Time -41 61 ns V = 48V, I = 50A, rr DD F dI /dt = 100A/s Q Reverse-Recovery Charge - 30 45 nC SD rr Note: = 175C. Product is not tested to this condition in production. 4: The maximum value is specified by design at T J www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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