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This literature is subject to all applicable copyright laws and is not for resale in any manner.N O I T A T FDD8778/FDU8778 N-Channel PowerTrench MOSFET N E M E L MP I E E March 2015 FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max r = 14.0m at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r = 21.0m at V = 4.5V, I = 33A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 12.6nC(Typ), V = 10V g(TOT) GS r and fast switching speed. DS(on) Low gate resistance RoHS compliant Application DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 40 A D -Pulsed (Note 1) 145 E Single Pulse Avalanche Energy (Note 2) 24 mJ AS P Power Dissipation 39 W D T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 3.8 C/W JC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 C/W JA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8778 FDD8778 TO-252AA 13 16mm 2500 units FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units FDU8778 FDU8778 F071 TO-251AA N/A(Tube) N/A 75 units 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8778/FDU8778 Rev. 1.2 R F D A E L