FDFS6N548 Integrated N-Channel POWERTRENCH MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptional performance of www.onsemi.com ON Semiconductors PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package. This device is designed specifically as a single package solution for D D DC to DC converters. It features a fast switching, low gate charge C MOSFET with very low on state resistance. The independently C connected Schottky diode allows its use in a variety of DC/DC G converter topologies. S A Features A Pin 1 Max r = 23 m at V = 10 V, I = 7 A DS(on) GS D SOIC8 Max r = 30 m at V = 4.5 V, I = 6 A DS(on) GS D CASE 751EB V < 0.45 V 2 A F V < 0.28 V 100 mA F Schottky and MOSFET Incorporated into Single Power Surface Mount SO8 Package A 1 8 C Electrically Independent Schottky and MOSFET Pinout for Design 2 7 A C Flexibility Low Miller Charge S 3 6 D Application G D 4 5 DC/DC Conversion MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V DraintoSource Voltage 30 V DS ORDERING INFORMATION See detailed ordering and shipping information on page 6 of V GatetoSource Voltage 20 V GS this data sheet. I Drain Current Continuous (Note 1a) 7 A D Pulsed 30 P Power Dissipation Dual Operation 2 W D Single Operation (Note 1a) 1.6 E DrainSource Avalanche Energy (Note 3) 12 mJ AS V Schottky Repetitive Peak Reverse Voltage 30 V RRM I Schottky Average Forward Current (Note 1a) 2 A O T , T Operating and Storage Junction 55 to C J STG Temperature Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, 78 C/W JA JunctiontoAmbient (Note 1a) R Thermal Resistance, 40 C/W JC JunctiontoCase (Note 1) Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: July, 2018 Rev. 2 FDFS6N548/DFDFS6N548 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D Breakdown Voltage Temperature 22 mV/C BV / I = 250 A, Referenced to 25C DSS D Coefficient T J I Zero Gate Voltage Drain Current V = 0 V, V = 24 V 1 A DSS GS DS V = 0 V, V = 24 V, T = 125C 250 GS DS J I GatetoSource Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 1.2 1.8 2.5 V GS(th) DS GS D V / GatetoSource Threshold Voltage I = 250 A, Referenced to 25C 5 mV/C GS(th) D T Temperature Coefficient J R DraintoSource OnResistance V = 10 V, I = 7 A 19 23 m DS(on) GS D V = 4.5 V, I = 6 A 23 30 GS D V = 10 V, I = 7 A, T = 125C 26 31 GS D J g Forward Transconductance V = 5 V, I = 7 A 20 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, f = 1 MHz 525 700 pF iss DS GS C Output Capacitance 100 133 pF oss C Reverse Transfer Capacitance 65 100 pF rss R Gate Resistance f = 1 MHz 0.8 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 7 A, V = 10 V, 6 12 ns d(on) DD D GS R = 6 GEN t Rise Time 2 10 ns r t TurnOff Delay Time 14 25 ns d(off) t Fall Time 2 10 ns f Q Total Gate Charge at 10 V V = 15 V, I = 7 A, V = 10 V 9 13 nC g(TOT) DS D GS Q GatetoSource Gate Charge 1.5 nC gs Q GatetoDrain Miller Charge 2 nC gd DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Forward Voltage V = 0 V, I = 7 A (Note 2) 0.90 1.25 V SD GS S t Reverse Recovery Time I = 7 A, di/dt = 100 A/ s 23 35 ns rr F Q Reverse Recovery Charge 14 21 nC rr SCHOTTKY DIODE CHARACTERISTICS V Reverse Breakdown Voltage I = 1 mA 30 V R R I Reverse Leakage V = 10 V T = 25C 39 250 A R R J T = 125C 18 mA J V Forward Voltage I = 100 mA T = 25C 225 280 mV F F J T = 125C 140 J I = 2 A T = 25C 364 450 F J T = 125C 290 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2