The FDG6301N is a N-channel enhancement-mode power MOSFET with a maximum drain current of 370 mA, a maximum drain-source voltage of 25 V, and a maximum gate-source voltage of 20 V. It is housed in a SC70-6 package which provides a small footprint for high power applications. The device is manufactured by ON Semiconductor and provides high switching speed, low gate charge, and low on-resistance. It is suitable for a variety of applications, including consumer, industrial and automotive. Additionally, it can be used in high-efficiency DC to DC conversion, general-purpose switching, and load switching applications.