X-On Electronics has gained recognition as a prominent supplier of FDH3632 MOSFET across the USA, India, Europe, Australia, and various other global locations. FDH3632 MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDH3632 ON Semiconductor

FDH3632 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDH3632
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET TO-247 / FDH3632
Datasheet: FDH3632 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.3135 ea
Line Total: USD 4.31

Availability - 798
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3055
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 450
Multiples : 450
450 : USD 2.7846
900 : USD 2.7846
1350 : USD 2.7846
1800 : USD 2.7846
2250 : USD 2.7846

101
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 4.0938
10 : USD 3.9
30 : USD 3.7841
90 : USD 3.6681
450 : USD 3.6151
900 : USD 3.5903

798
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 4.3135
10 : USD 4.3135
25 : USD 3.6113
100 : USD 3.2436
250 : USD 3.199
450 : USD 2.6194
900 : USD 2.5191
2700 : USD 2.4968
5400 : USD 2.4856

58
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 60
Multiples : 60
60 : USD 5.2769

31224
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3
Multiples : 1
3 : USD 5.6259
10 : USD 5.5238
25 : USD 4.502
100 : USD 3.9413
250 : USD 3.9287
450 : USD 3.0391
900 : USD 2.8413
2700 : USD 2.8161

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Rise Time
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We are delighted to provide the FDH3632 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDH3632 and other electronic components in the MOSFET category and beyond.

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MOSFET Power, N-Channel, POWERTRENCH 100 V, 80 A, 9 m FDH3632, FDP3632, FDB3632 www.onsemi.com Features R = 7.5 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 84 nC (Typ.), V = 10 V g GS V R MAX I MAX DSS DS(ON) D Low Miller Charge 100 V 9 m 80 A Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are PbFree and are RoHS Compliant Applications G Synchronous Rectification Battery Protection Circuit S Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter TO2473 CASE 340CK G D S TO2203 CASE 340AT G D S D2PAK3 CASE 418AJ MARKING DIAGRAM Y&Z&3&K FDX3632 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDX3632 = Specific Device Code X = H/P/B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 5 FDP3632/DFDH3632, FDP3632, FDB3632 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 111C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 12 amb GS R = 43C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 337 mJ AS P Power Dissipation (T = 25C) 310 W D C Derate Above 25C 2.07 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.12mH, I = 75 A, V = 80 V. J AS DD THERMAL CHARACTERISTICS Symbol Parameter Value Unit 2 R Thermal Resistance, Junction to Case, Max. TO220, D PAK, TO247 0.48 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2) 62 C/W JA 2 2 R Thermal Resistance, Junction to Ambient, D PAK, Max. 1 in copper pad area 43 C/W JA R Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2) 30 C/W JA 2. Pulse Width = 100 s PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB3632 FDB3632 D PAK 330 mm 24 mm 800 Units FDP3632 FDP3632 TO220 Tube N/A 50 Units FDH3632 FDH3632 TO247 Tube N/A 30 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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