FDI025N06 N-Channel PowerTrench MOSFET June 2008 FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m Features General Description R = 1.9m ( Typ.) V = 10V, I = 75A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge High performance trench technology for extremely low R DS(on) High power and current handling capability Application RoHS compliant DC to DC convertors / Synchronous Rectification D G TO-262 FDI Series GSD S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GSS o -Continuous (T = 25 C) 265* A C I Drain Current D o -Continuous (T = 100 C) 190* A C I Drain Current - Pulsed (Note 1) 1060 A DM E Single Pulsed Avalanche Energy (Note 2) 2531 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns o (T = 25 C) 395 W C P Power Dissipation D o o - Derate above 25C2.6W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case 0.38 JC o R Thermal Resistance, Case to Sink Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient 62.5 JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDI025N06 Rev. A FDI025N06 N-Channel PowerTrench MOSFET o Package Marking and Ordering Information T = 25 C unless otherwise noted C Device Marking Device Package Reel Size Tape Width Quantity FDI025N06 FDI025N06 TO-262 - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics o BV Drain to Source Breakdown Voltage I = 250A, V = 0V, T = 25C60 - - V DSS D GS C BV Breakdown Voltage Temperature DSS o o I = 250A, Referenced to 25 C - 0.04 - V/ C D T Coefficient J V = 60V, V = 0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 60V, V = 0V, T = 150 C - - 500 DS GS C I Gate to Body Leakage Current V = 20V, V = 0V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250A2.53.54.5V GS(th) GS DS D R Static Drain to Source On Resistance V = 10V, I = 75A - 1.9 2.5 m DS(on) GS D g Forward Transconductance V = 10V, I = 75A (Note 4) - 200 - S FS DS D Dynamic Characteristics C Input Capacitance - 11190 14885 pF iss V = 25V, V = 0V DS GS C Output Capacitance - 1610 2140 pF oss f = 1MHz C Reverse Transfer Capacitance - 750 1125 pF rss Q Total Gate Charge at 10V - 174 226 nC g(tot) V = 48V, I = 75A Q Gate to Source Gate Charge DS D - 54 - nC gs V = 10V GS Q Gate to Drain Miller Charge - 50 - nC gd (Note 4, 5) Switching Characteristics t Turn-On Delay Time - 134 278 ns d(on) V = 30V, I = 75A t Turn-On Rise Time - 324 658 ns DD D r V = 10V, R = 25 GS GEN t Turn-Off Delay Time - 348 706 ns d(off) t Turn-Off Fall Time - 250 510 ns (Note 4, 5) f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 265 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 1060 A SM V Drain to Source Diode Forward Voltage V = 0V, I = 75A - - 1.3 V SD GS SD t Reverse Recovery Time -69 - ns V = 0V, I = 75A rr GS SD dI /dt = 100A/s (Note 4) Q Reverse Recovery Charge - 152 - nC F rr Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.9mH, I = 75A, V = 50V, R = 25, Starting T = 25C AS DD G J 3: I 75A, di/dt 200A/s, V BV , Starting T = 25C SD DD DSS J 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDI025N06 Rev. A www.fairchildsemi.com 2