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V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor Drives and Uninterruptible Power Supplies Renewable System D G G D 2 I -PAK S S o MOSFET Maximum Ratings T = 25 C unless otherwise note. C Symbol Parameter FDI030N06 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C, Silicon Limited) 193* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 136* A D C o - Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 772 A DM E Single Pulsed Avalanche Energy (Note 2) 1434 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns o (T = 25 C) 231 W C P Power Dissipation D o o - Derate Above 25C1.54W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDI030N06 Unit R Thermal Resistance, Junction to Case, Max. 0.65 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDI030N06 Rev. C2