FDM 15-06KC5 1) I = 15 A D25 CoolMOS Power MOSFET V = 600 V DSS with HiPerDyn FRED R = 0.165 DS(on) max Buck and Boost Topologies 3 ISOPLUS i4 Electrically isolated back surface T 2500 V electrical isolation 5 N-Channel Enhancement Mode 1 4 Low R , high V MOSFET DSon DSS isolated back E72873 5 Ultra low gate charge surface D 2 Preliminary data Features MOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate V T = 25C 600 V DSS VJ - high power dissipation - isolated mounting surface V 20 V GS - 2500 V electrical isolation I T = 25C 15 A D25 C - low drain to tab capacitance (< 40 pF) I T = 90C 11 A 1) D90 C Fast CoolMOS power MOSFET th 4 generation E single pulse 522 mJ AS I = 7.9 A T = 25C D C - high blocking capability E repetitive 0.79 mJ AR - lowest resistance dV/dt MOSFET dV/dt ruggedness V = 0...480 V 50 V/ns DS - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance Symbol Conditions Characteristic Values due to reduced chip thickness (T = 25C, unless otherwise speci ed) VJ Enhanced total power density min. typ. max. HiPerDyn FRED - consisting of series connected diodes R V = 10 V I = 12 A 150 165 m DSon GS D - enhanced dynamic behaviour for V V = V I = 0.79 mA 2.5 3 3.5 V GS(th) DS GS D high frequency operation I V = 600 V V = 0 V T = 25C 1 A DSS DS GS VJ Applications T = 125C 10 A VJ I V = 20 V V = 0 V 100 nA Switched mode power supplies GSS GS DS (SMPS) C V = 0 V V = 100 V 2000 pF iss GS DS Uninterruptible power supplies (UPS) C f = 1 MHz 100 pF oss Power factor correction (PFC) Q 40 52 nC g Q V = 0 to 10 V V = 400 V I = 12 A 9 nC gs GS DS D Advantages Q 13 nC gd Easy assembly: t 12 ns d(on) no screws or isolation foils required t 5 ns r Space savings t 50 ns d(off) High power density V = 10 V V = 400 V GS DS t 5 ns f High reliability I = 12 A R = 3.3 D G E tbd mJ on E tbd mJ off E tbd mJ rec off 1) R 1.1 K/W CoolMOS is a trademark of thJC In neon Technologies AG. R with heat transfer paste 0.35 K/W thCH IXYS reserves the right to change limits, test conditions and dimensions. 20190130f 2019 IXYS All rights reserved 1 - 6 phase-outFDM 15-06KC5 MOSFET T Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) VJ min. typ. max. I V = 0 V 12 A S GS V I = 12 A V = 0 V 0.9 1.2 V SD F GS t 390 ns rr Q I = 12 A -di /dt = 100 A/s V = 400 V 7.5 C RM F F R I 38 A RM Diode D (data for series connection) Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 15 A F25 C I T = 90C 8 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 15 A T = 25C 2.50 V F F VJ I = 30 A 3.00 V F I = 15 A T = 150C 2.00 A F VJ I = 30 A 2.55 A F I V = V T = 25C 1 A R R RRM VJ T = 150C 0.08 mA VJ I 150 A FSM t = 10 ms (50 Hz), sine T = 45C VJ I I = 20 A V = 100 V T = 25C 3 A RM F R VJ t -di /dt = 200 A/s 35 ns rr F R 2.4 K/W thJC R with heat transfer paste 0.8 K/W thJH Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T storage -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. max. coupling capacity between shorted pins 40 C pF P and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight g 9 IXYS reserves the right to change limits, test conditions and dimensions. 20190130f 2019 IXYS All rights reserved 2 - 6 phase-out