X-On Electronics has gained recognition as a prominent supplier of FDMA1032CZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMA1032CZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMA1032CZ ON Semiconductor

FDMA1032CZ electronic component of ON Semiconductor
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Part No.FDMA1032CZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V Complementary PowerTrench MOSFET
Datasheet: FDMA1032CZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7691 ea
Line Total: USD 0.77 
Availability - 2411
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.468
6000 : USD 0.468
9000 : USD 0.468
12000 : USD 0.468

2411
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7691
10 : USD 0.6187
30 : USD 0.5435
100 : USD 0.4872
500 : USD 0.442
1000 : USD 0.4193

   
Manufacturer
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RoHS - XON
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
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We are delighted to provide the FDMA1032CZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMA1032CZ and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMA1032CZ 20V Complementary PowerTrench MOSFET FDMA1032CZ 20V Complementary PowerTrench MOSFET Features General Description x Q1: N-Channel 3.7 A, 20V. R = 68 m : V = 4.5V This device is designed specifically as a single package DS(ON) GS R = 86 m : V = 2.5V DS(ON) GS solution for a DC/DC Switching MOSFET in cellular x Q2: P-Channel handset and other ultra-portable applications. It 3.1 A, 20V. R = 95 m : V = 4.5V features an independent N-Channel & P-Channel DS(ON) GS R = 141 m : V = 2.5V DS(ON) GS MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET x Low profile 0.8 mm maximum in the new package is also minimized to allow high frequency switching MicroFET 2x2 mm directly from the controlling device. The MicroFET 2x2 HBM ESD protection level > 2 kV (Note 3) package offers exceptional thermal performance for its x RoHS Compliant physical size and is well suited to switching applications. Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D2 1 6 D1 S1 D1 D2 2 5 G1 G2 3 4 D1 G2 S2 D2 S2 MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 20 20 V DS V Gate-Source Voltage 12r 12 V GS A Drain Current Continuous (Note 1a) 3.7 3.1 I D Pulsed 6 6 P Power Dissipation for Single Operation (Note 1a) 1.4 W D (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 q C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) T JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) T JA q C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) T JA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) R T JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 032 FDMA1032CZ 7 8mm 3000 units 2010 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 FDMA1032CZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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