Dual N-Channel, Digital FET FDG6301N-F085 Features 25 V, 0.22 A Continuous, 0.65 A Peak R = 4 V = 4.5 V, DS(ON) GS R = 5 V = 2.7 V. DS(ON) GS www.onsemi.com Very Low Level Gate Drive Requirements allowing Directop Eration in 3 V Circuits (V < 1.5 V) GS(th) GateSource Zener for ESD Ruggedness ( >6 kV Human Body Model) Compact Industry Standard SC706 Surface Mount Package. AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications SC88 (SC70 6 Lead), 1.25x2 Low Voltage Applications as a Replacement for Bipolar Digital CASE 419AD Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units Drain to Source Voltage 25 V VDSS VGS Gate to Source Voltage 8 V ID Drain Current Continuous 0.22 A Pulsed 0.65 PD Power Dissipation 0.3 W TJ, TSTG Operating and Storage Temperature 55 to 150 C ESD Electrostatic Discharge Rating 6.0 kV MILSTD883D Human Body Model (100 pF / 1500 W) R Thermal Resistance, Junction to Ambient 415 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. R is the sum of the junctiontocase and casetoambient thermal JA resistance, where the case thermal reference is defined as the Solder mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. R = 415 C/W on minimum pad JA mounting on FR4 board in still air. 2. A suffix as ...F085P has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in August 2014. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% ORDERING INFORMATION Device Device Marking Package Shipping FDG6301NF085 FDG6301N SC88 (SC70 6 Lead) 3,000 units / Tape & Reel (PbFree, Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 3 FDG6301NF085/DFDG6301NF085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS 25 V I = 250 A, V = 0 V D GS Zero Gate Voltage Drain Current IDSS 1 A V = 20 V, V = 0 V DS GS T = 55C 10 J Gate to Source Leakage Current IGSS V = 8 V 100 nA GS On Characteristics Gate to Source Threshold Voltage VGS(th) V = V I = 250 A 0.65 0.85 1.5 V GS DS, D Drain to Source On Resistance rDS(on) I = 0.22 A, V = 4.5 V 2.6 4 D GS I = 0.19 A, V = 2.7 V 3.7 5 D GS I = 0.22 A, V = 4.5 V, T = 125C 5.3 7 D GS J OnState Drain Current ID(on) 0.22 V = 4.5 V, V = 5 V GS DS Forward Transconductance gFS s I = 0.22 A, V = 5 V 0.2 D DS Dynamic Characteristics V = 10 V, V = 0 V, f = 1 MHz DS GS Input Capacitance Ciss 9.5 pF Output Capacitance Coss 6 pF Reverse Transfer Capacitance Crss 4.5 pF Total Gate Charge at 4.5 V Qg(TOT) 0.4 nC V = 0 to 4.5 V V = 5 V, I = 0.22 A 0.29 GS DD D V = 5 V I = 0.22 A Gate to Source Gate Charge Qgs DD , D 0.12 Gate to Drain Miller Charge Qgd 0.03 Switching Characteristics V = 5 V, I = 0.5 A, V = 4.5 V, DD D GS 10 TurnOn Delay Time td(on) 5 ns R = 50 GEN 10 Rise Time t 4.5 ns r 8 TurnOff Delay Time td(off) 4 ns 7 Fall Time t 3.2 ns f DrainSource Diode Characteristics 0.25 Maximum Continuous Source Current IS A Source to Drain Diode Voltage VSD I = 0.25 A, V = 0 V 0.8 1.2 V SD GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2