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X-On Electronics has gained recognition as a prominent supplier of FDG6301N-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDG6301N-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDG6301N-F085 ON Semiconductor

FDG6301N-F085 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No. FDG6301N-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 25V 0.22A 6-Pin SC-70 T/R
Datasheet: FDG6301N-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.1023 ea
Line Total: USD 613.8 
Availability - 0
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 6000
Multiples : 3000
6000 : USD 0.1023

0
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 3
Multiples : 1
3 : USD 0.3337
25 : USD 0.2522
83 : USD 0.1839
227 : USD 0.1734

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qualification
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDG6301N-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG6301N-F085 and other electronic components in the MOSFETs category and beyond.

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FDG6301N F085 Dual N-Channel Digital FET April 2016 FDG6301N F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R = 4 V = 4.5 V, DS(ON) GS R = 5 V = 2.7 V. DS(ON) GS Very low level gate drive requirements allowing directop- eration in 3 V circuits (V < 1.5 V). GS(th) Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. Qualified to AEC Q101 RoHS Compliant Applications Low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DSS V Gate to Source Voltage 8 V GS Drain Current Continuous 0.22 I A D Pulsed 0.65 P Power Dissipation 0.3 W D o T , T Operating and Storage Temperature -55 to +150 C J STG Electrostatic Discharge Rating MIL-STD-883D kV ESD 6.0 Human Body Model(100 pF / 1500 W) o R Thermal Resistance, Junction to Ambient 415 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDG6301N FDG6301N F085 SC70-6 7 8mm 3000 units Notes: is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder 1: R JA o mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. R = 415 C/W on JC JA JA minimum pad mounting on FR-4 board in still air 2: A suffix as F085P has been temporarily introduced in order to manage a double source strategy as Fairchild has officially announced in Aug 2014. 3: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDG6301N F085 Rev. 1.2FDG6301N F085 Dual N-Channel Digital FET Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250A, V = 0V 25 - - V VDSS D GS V = 20V, - - 1 DS I Zero Gate Voltage Drain Current A DSS o V = 0V T = 55 C - - 10 GS J I Gate to Source Leakage Current V = 8V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 0.65 0.85 1.5 V GS(th) GS DS D I = 0.22A, V = 4.5V - 2.6 4 D GS I = 0.19A, V = 2.7V - 3.7 5 D GS r Drain to Source On Resistance DS(on) I = 0.22A, V = 4.5V D GS -5.3 7 o T = 125 C J I On-State Drain Current V = 4.5V, V = 5V 0.22 - - D(on) GS DS g Forward Transconductance I = 0.22A, V = 5V - 0.2 - S FS D DS Dynamic Characteristics C Input Capacitance - 9.5 - pF iss V = 10V, V = 0V, DS GS C Output Capacitance - 6 - pF oss f = 1MHz C Reverse Transfer Capacitance - 1.3 - pF rss Q Total Gate Charge at -4.5V V = 0 to 4.5V - 0.29 0.4 nC g(TOT) GS V = 5V DD Q Gate to Source Gate Charge -0.12 - nC gs I = 0.22A D Q Gate to Drain Miller Charge - 0.03 - nC gd Switching Characteristics t Turn-On Delay Time - 5 10 ns d(on) V = 5V, I = 0.5A DD D t Rise Time - 4.5 10 ns r V = 4.5V, R = 50 GS GEN t Turn-Off Delay Time - 4 8 ns d(off) t Fall Time - 3.2 7 ns f Drain-Source Diode Characteristics I Maximum Continuous Source Current - - 0.25 A S V Source to Drain Diode Voltage I = 0.25A, V = 0V - 0.8 1.2 V SD SD GS 2016 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDG6301N F085 Rev. 1.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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