FDG6301N F085 Dual N-Channel Digital FET April 2016 FDG6301N F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R = 4 V = 4.5 V, DS(ON) GS R = 5 V = 2.7 V. DS(ON) GS Very low level gate drive requirements allowing directop- eration in 3 V circuits (V < 1.5 V). GS(th) Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. Qualified to AEC Q101 RoHS Compliant Applications Low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DSS V Gate to Source Voltage 8 V GS Drain Current Continuous 0.22 I A D Pulsed 0.65 P Power Dissipation 0.3 W D o T , T Operating and Storage Temperature -55 to +150 C J STG Electrostatic Discharge Rating MIL-STD-883D kV ESD 6.0 Human Body Model(100 pF / 1500 W) o R Thermal Resistance, Junction to Ambient 415 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDG6301N FDG6301N F085 SC70-6 7 8mm 3000 units Notes: is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder 1: R JA o mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. R = 415 C/W on JC JA JA minimum pad mounting on FR-4 board in still air 2: A suffix as F085P has been temporarily introduced in order to manage a double source strategy as Fairchild has officially announced in Aug 2014. 3: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDG6301N F085 Rev. 1.2FDG6301N F085 Dual N-Channel Digital FET Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250A, V = 0V 25 - - V VDSS D GS V = 20V, - - 1 DS I Zero Gate Voltage Drain Current A DSS o V = 0V T = 55 C - - 10 GS J I Gate to Source Leakage Current V = 8V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 0.65 0.85 1.5 V GS(th) GS DS D I = 0.22A, V = 4.5V - 2.6 4 D GS I = 0.19A, V = 2.7V - 3.7 5 D GS r Drain to Source On Resistance DS(on) I = 0.22A, V = 4.5V D GS -5.3 7 o T = 125 C J I On-State Drain Current V = 4.5V, V = 5V 0.22 - - D(on) GS DS g Forward Transconductance I = 0.22A, V = 5V - 0.2 - S FS D DS Dynamic Characteristics C Input Capacitance - 9.5 - pF iss V = 10V, V = 0V, DS GS C Output Capacitance - 6 - pF oss f = 1MHz C Reverse Transfer Capacitance - 1.3 - pF rss Q Total Gate Charge at -4.5V V = 0 to 4.5V - 0.29 0.4 nC g(TOT) GS V = 5V DD Q Gate to Source Gate Charge -0.12 - nC gs I = 0.22A D Q Gate to Drain Miller Charge - 0.03 - nC gd Switching Characteristics t Turn-On Delay Time - 5 10 ns d(on) V = 5V, I = 0.5A DD D t Rise Time - 4.5 10 ns r V = 4.5V, R = 50 GS GEN t Turn-Off Delay Time - 4 8 ns d(off) t Fall Time - 3.2 7 ns f Drain-Source Diode Characteristics I Maximum Continuous Source Current - - 0.25 A S V Source to Drain Diode Voltage I = 0.25A, V = 0V - 0.8 1.2 V SD SD GS 2016 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDG6301N F085 Rev. 1.2