X-On Electronics has gained recognition as a prominent supplier of NTE2956 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2956 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2956 NTE

NTE2956 electronic component of NTE
NTE2956 NTE
NTE2956 MOSFETs
NTE2956  Semiconductors

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See Product Specifications
Part No. NTE2956
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 500V; 16A; TO220F
Datasheet: NTE2956 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
14: USD 4.9005 ea
Line Total: USD 68.61 
Availability - 9
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 14
Multiples : 1
14 : USD 4.9005
100 : USD 3.6125
250 : USD 3.5125
500 : USD 3.3125
1000 : USD 3.225
2500 : USD 3.1375
5000 : USD 3.0875
7500 : USD 2.975

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2956 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2956 and other electronic components in the MOSFETs category and beyond.

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NTE2956 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: R = 380m Max V = 10V, I = 8A DS(on) GS D Low Gate Charge: 32nC Typ D Low C : 20pF Typ RSS 100% Avalanche Tested Applications: G LCD/LED/PDP TV Lighting Uninterruptible Power Supply S Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ........................................................ 500V DSS GateSource Voltage, V ........................................................ 30V GSS Drain Current (Note 1), I D Continuous T = +25C ............................................................... 16A C T = +100C ............................................................. 9.6A C Pulsed (Note 2) .............................................................. 64A Single Pulsed Avalanche Energy (Note 3), E ...................................... 780mJ AS Avalanche Current (Note 2), I ...................................................... 16A AR Repetitive Avalanche Energy (Note 2), E .......................................... 20mJ AR Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 4.5V/ns Power Dissipation (T = +25C), P ................................................ 38.5W C D Derate Above +25 C ...................................................... 0.3W/ C Operating Temperature Range, T .......................................... 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Lead temperature (During Soldering, 1/8 from case, 5 sec ), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R ............................ 3.3 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ........................ 62.5 C/W thJA Note 1. Drain current limited by maximum junction temperature. Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. L = 5.5mH, I = 16A, V = 50V, R = 25 , starting T = +25C. AS DD G J Note 4. I 16A, di/dt 200A/ s, V V , starting T = +25C. SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0V, I = 250 A 500 V (BR)DSS GS D Breakdown Voltage Temperature Coefficient V / T I = 250 A, Referenced to +25 C 0.5 V/ C (BR)DSS J D Zero Gate Voltage Drain Current I V = 500V, V = 0 1.0 A DSS DS GS 10 V = 400V, T = +125 C A DS C GateBody Leakage Current I V = 30V, V = 0V 100 nA GSS GS DS ON Characteristics Gate Threshold Voltage V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 8A 0.31 0.38 DS(on) GS D Forward Transconductance g V = 40V, I = 8A 23 S FS DS D Dynamic Characteristics Input Capacitance C 1495 1945 pF V = 0V, V = 25V, iss GS DS f = 1MHz Output Capacitance C 235 310 pF oss Reverse Transfer Capacitance C 20 30 pF rss Switching Characteristics TurnOn Delay Time t 40 90 ns V = 250V I = 16A, d(on) DD , D R = 25 , Note 5 G Rise Time t 150 310 ns r TurnOff Delay Time t 65 140 ns d(off) Fall Time t 80 170 ns f Total Gate Charge Q V = 400V I = 16A, 32 45 nC g DD , D V = 10V, Note 5 GS GateSource Charge Q 8.5 nC gs GateDrain Charge Q 14 nC gd DrainSource Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode I 9.2 A S Forward Current Maximum Pulsed Drain-Source Diode I 37 A SM Forward Current DrainSource Diode Forward Voltage V V = 0V, I = 16A 1.4 V SD GS S Reverse Recovery Time t V = 0V, I = 16A, 490 ns rr GS S dI /dt = 100A/ s F Reverse Recovery Charge Q 5.0 C rr Note 5. Essentially independent of operating temperature typical characteristics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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