NTE2970 MOSFET NChannel, Enhancement Mode High Speed Switch TO3P Type Package Features: Applications: Avalanche Rugged Technology SMPS Rugged Gate Oxide Technology DCDC Converter Lower Input Capacitance Battery Charger Improved Gate Charge Power Supply of Printer Extended Safe Operating Area Copier Lower Leakage Current HDD, FDD, TV, VCR Lower R Personal Computer DS(ON) Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 500V DSS Drain Current, Continuous, I D T = +25 C .................................................................. 22A C T = +100 C ............................................................... 13.4A C Drain Current, Pulsed (Note 1), I ................................................... 88A DM GateSource Voltage, V ......................................................... 30V GS Single Pulsed Avalanche Energy (Note 2), E ..................................... 2151mJ AS Avalanche Current (Note 1), I ...................................................... 22A AR Repetitive Avalanche Energy (Note 1), E ......................................... 27.8mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 3.5V/ns Total Power Dissipation (T = +25 C), P ........................................... 278W C D Linear Derating Factor ................................................... 2.22W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/8 from case, 5 sec.), T ...................... +300 C L Maximum Thermal Resistance, Junction toCase, R ........................... 0.45 C/W thJC Typical Thermal Resistance, Case toSink, R ................................. 0.24 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 40 C/W thJA Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature. Note 2. L = 8mH, I = 22A, V = 50V, R = 27 , Starting T = +25 C. AS DD G J Note 3. I 22A, di/dt 300A/ s, V V , Starting T = +25 C. SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 250 A 500 V (BR)DSS GS D BV/ T 0.69 V/ C Breakdown Voltage Temperature I = 250 A J D Coefficient Gate Threshold Voltage V V = 5V, I = 250 A 2.0 4.0 V GS(th) DS D GateSource Leakage I V = 30V 100 nA GSS GS Zero Gate Voltage Drain Current I V = 500V 10 A DSS DS V = 400V, T = +125 C 100 A DS C Static DrainSource ON Resistance R V = 10V, I = 11A, Note 4 0.25 DS(on) GS D Forward Transconductance g V = 50V, I = 11A, Note 4 17.31 mhos fs DS D Input Capacitance C 3940 5120 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 465 535 pF oss Reverse Transfer Capacitance C 215 250 pF rss TurnOn Delay Time t 27 65 ns V = 200V I = 22A, V = 10V, d(on) DD , D GS R = 5.3 , Note 4, Note 5 G Rise Time t 30 70 ns r TurnOff Delay Time t 150 310 ns d(off) Fall Time t 43 95 ns f Total Gate Charge Q 182 236 nC V = 400V, V = 10V, I = 22A, g DS GS D Note 4, Note 5 GateSource Charge Q 26 nC gs GateDrain (Miller) Charge Q 79.6 nC gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I 22 A Integral Reverse PN Diode in the S MOSFET Pulsed Source Current (Note 1) I 88 A SM V 1.4 V Diode Forward Voltage T = +25 C, I = 22A, V = 0V SD J S GS t 528 ns Reverse Recovery Time T = +25 C, I = 22A, rr J F di /dt = 100A/ s, Note 4 F Reverse Recovery Charge Q 8.35 C rr Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature. Note 4. Pulse Test: Pulse Width = 250 s, Duty Cycle 2%. Note 5. Essentially Independent of Operating Temperature. D G S