X-On Electronics has gained recognition as a prominent supplier of NTE2980 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2980 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2980 NTE

NTE2980 electronic component of NTE
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Part No.NTE2980
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 60V; 7.7A; TO251
Datasheet: NTE2980 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.6446 ea
Line Total: USD 72.89 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 3.6446
50 : USD 2.2174
100 : USD 2.0057
200 : USD 1.8609
500 : USD 1.7383

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.906
3 : USD 3.514
7 : USD 2.562
18 : USD 2.422

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2980 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2980 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image NTE2987
Transistor: N-MOSFET; 100V; 20A; TO220
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2981
Transistor: N-MOSFET; 100V; 7.7A; TO251
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2984
Transistor: N-MOSFET; 60V; 17A; TO220
Stock : 15
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2985
Transistor: N-MOSFET; 60V; 30A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2986
Transistor: N-MOSFET; 60V; 50A; TO220
Stock : 7
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2988
Transistor: N-MOSFET; 60V; 0.2A; TO52
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2989
Transistor: N-MOSFET; 600V; 10A; TO220FN
Stock : 7
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE299
Transistor: NPN; bipolar; RF; 35V; 1A; 4W; TO202-3; Pout:1.4W
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2990
Transistor: P-MOSFET; 250V; 6A; TO220F
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2991
Transistor: N-MOSFET; 55V; 110A; TO220
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2981
Transistor: N-MOSFET; 100V; 7.7A; TO251
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2984
Transistor: N-MOSFET; 60V; 17A; TO220
Stock : 15
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2985
Transistor: N-MOSFET; 60V; 30A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2986
Transistor: N-MOSFET; 60V; 50A; TO220
Stock : 7
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2988
Transistor: N-MOSFET; 60V; 0.2A; TO52
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2989
Transistor: N-MOSFET; 600V; 10A; TO220FN
Stock : 7
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2990
Transistor: P-MOSFET; 250V; 6A; TO220F
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2991
Transistor: N-MOSFET; 55V; 110A; TO220
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2992
Transistor: N-MOSFET; 600V; 6A; TO220FN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2993
Transistor: N-MOSFET; 400V; 14A; TO3
Stock : 10
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2980 Logic Level MOSFET NChannel, Enhancement Mode High Speed Switch TO251 Type Package D Features: Dynamic dv/dt Rating Logic Level Gate Drive R (on) Specified at V = 4V & 5V DS GS G Fast Switching TO251 Type Package S Absolute Maximum Ratings: Drain Current, I D Continuous (V = 5V) GS T = +25 C .............................................................. 7.7A C T = +100 C ............................................................. 4.9A C Pulsed (Note 1) .............................................................. 31A Total Power Dissipation (T = +25 C), P ............................................ 25W C D Derate Above 25 C ...................................................... 0.20W/ C Total Power Dissipation (PC Board Mount, T = +25 C, Note 2), P ...................... 2.5W C D Derate Above 25 C ...................................................... 0.02W/ C GateSource Voltage, V ......................................................... 10V GS Single Pulsed Avalanche Energy (Note 3), E ....................................... 47mJ AS Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 4.5V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .......... +260 C L Maximum Thermal Resistance: JunctiontoCase, R .................................................. 5.0 C/W thJC Junction toAmbient (PCB Mount, Note 2), R ............................ 50 C/W thJA JunctiontoAmbient, R ............................................... 110 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. When mounted on a 1 square PCB (FR 4 or G10 material). Note 3. L = 924 H, V = 25V, R = 25 , Starting T = +25 C, I = 7.7A. DD G J AS Note 4. I 10A, di/dt 90A/ s, V V , T +150 C. SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 60 V DSS GS D Breakdown Voltage Temperature V / Reference to +25 C, I = 1mA 0.073 V/ C (BR)DSS D Coefficient T J Static DrainSource ON Resistance R V = 5V, I = 4.6A, Note 5 0.20 DS(on) GS D V = 4V, I = 3.9A, Note 4 0.28 GS D Gate Threshold Voltage V V = V , I = 250 A 1.0 2.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 4.6A, Note 5 3.4 mhos fs DS D DraintoSource Leakage Current I V = 60V, V = 0 25 A DSS DS GS V = 48V, V = 0V, T = +125 C 250 A DS GS C GateSource Leakage Forward I V = 10V 100 nA GSS GS GateSource Leakage Reverse I V = 10V 100 nA GSS GS Total Gate Charge Q V = 5V, I = 10A, V = 48V, Note 5 8.4 nC g GS D DS GateSource Charge Q 3.5 nC gs GateDrain (Miller) Charge Q 6.0 nC gd TurnOn Delay Time t V = 30V I = 10A, R = 12 , 9.3 ns d(on) DD , D G R = 2.8 , Note 5 D Rise Time t 110 ns r TurnOff Delay Time t 17 ns d(off) Fall Time t 26 ns f Internal Drain Inductance L Between lead, 6mm (0.25) from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 400 pF iss GS DS Output Capacitance C 170 pF oss Reverse Transfer Capacitance C 42 pF rss SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 7.7 A S Pulse Source Current I (Body Diode) Note 1 31 A SM Diode Forward Voltage V T = +25 C, I = 7.7A, V = 0V, Note 5 1.6 V SD J S GS Reverse Recovery Time t 65 130 ns T = +25 C, I = 10A, di/dt = 100A/ s, rr J F Note 5 Reverse Recovery Charge Q 0.33 0.65 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible on (turnon is dominated by L + L ) S D Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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