NTE2992 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D 4V Gate Drive Low Drain Source OnResistance High Forward Transfer Admittance Low Leakage Current Applications: G Switching Regulators UPS S DCDC Converters General Purpose Power Amplifier Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DrainSource Voltage, V ........................................................ 600V DSS DrainGate Voltage (R = 20k), V ............................................. 600V GS DGR GateSource Voltage, V ........................................................ 30V GSS Drain Current, I D Continuous ................................................................... 6A Pulsed ...................................................................... 24A Maximum Power Dissipation (T = +25C), P ........................................ 45W C D Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Thermal Resistance, Junction toCase, R .................................... 2.77 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 10mA, V = 0V 600 V (BR)DSS D GS Gate Threshold Voltage V I = 1mA, V = 10V 1.5 3.5 V GS(th) D DS Zero Gate Voltage Drain Current I V = 600V, V = 0V 300 A DSS DS GS GateSource Leakage Current I V = 25V, V = 0V 100 nA GSS GS DS DrainSource OnState Resistance R I = 3A, V = 10V 0.95 1.25 DS(on) D GS Forward Transfer Admittance g I = 3A, V = 10V 3 4 S fs D DS Input Capacitance C V = 10V, V = 0V, f = 1MHz 1400 2000 pF iss DS GS Output Capacitance C 75 120 pF oss Reverse Transfer Capacitance C 250 380 pF rss Rev. 1013Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit TurnOn Time t 40 80 ns V = 300V, I = 3A, V = 10V, d(on) DD D GS R = 100 L Rise Time t 25 50 ns r TurnOff Time t 85 170 ns d(off) Fall Time t 20 40 ns f Total Gate Charge Q 56 110 nC V = 400V, V = 10V, I = 6A g DD GS D GateSource Charge Q 32 nC gs GateDrain (Miller) Charge Q 24 nC gd SourceDrain Diode Ratings and Characteristics: (T = +25C unless otherwise specified) A Continuous Drain Reverse Current I 6 A DR Pulse Drain Reverse Current I 24 A DRP Diode Forward Voltage V I = 6A, V = 0V 2 V DSF DR GS Reverse Recovery Time t 460 ns I = 6A, V = 0V, rr DR GS dI /dt = 100A/s DR Reverse Recovered Charge Q 3.5 C rr .181 (4.6).126 (3.2) Dia Max Max .405 (10.3) .114 (2.9) Max Isol .252 (6.4) .622 (15.0) Max GD S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)