X-On Electronics has gained recognition as a prominent supplier of NTE2995 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2995 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2995 NTE

NTE2995 electronic component of NTE
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See Product Specifications
Part No.NTE2995
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 600V; 10A; TO220
Datasheet: NTE2995 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 7.1125 ea
Line Total: USD 35.56 
Availability - 9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 7.1125
50 : USD 5.6625
100 : USD 5.4875
250 : USD 5.3375
500 : USD 5.05
1000 : USD 4.9
2500 : USD 4.825
5000 : USD 4.6625

11
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.05
3 : USD 5.936
8 : USD 5.614

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2995 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2995 and other electronic components in the MOSFETs category and beyond.

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NTE2995 MOSFET NChannel, Enhancement Mode High Speed Switch Features: R = 0.65 Typical DS(on) D Extremely High dv/dt Capability Gate Charge Minimized GatetoSource Zener Diode Protected G Applications: High Current, High Speed Switching Ideal for OffLine Power Supplies, Adaptor and PFC S Lighting Absolute Maximum Ratings: Drain Source Voltage (V = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V GS DS Drain Gate Voltage (R = 20k), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V GS DGR GateSource Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V GS Drain Current, I D Continuous T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A C Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Power Dissiption (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W C TOT Derate Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92W/ C GateSource ESD Voltage (HBM C = 100pF, R = 1.5k ), V . . . . . . . . . . . . . . . . . . . . . 4000V esd(GS) Peak Diode Recovery Voltage Slope (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Avalanche Current, Repetitive or Non Repetitive (Pulse Width Limited by T max), I . . . . . . . 9A J AR Single Pulse Avalanche Energy (Starting T = +25C, I = I , V = 50V), E . . . . . . . . . 300mJ J D AR DD AS Repetitive Avalanche Energy (Pulse Width Limited by T max), E . . . . . . . . . . . . . . . . . . . . . 3.5mJ J AR Minimum Gate Source Breakdown Voltage (I = 1mA, Open Drain, Note 3), V . . . . 30V GS (BR)GSO Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09 C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5 C/W thJA Lead Temperature (During Soldering), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300 C L Note 1. Pulse width limited by safe operating area. Note 2. I 10A, di/dt 200A/ s, V V , T T max. SD DD (BR)DSS J J Note 3. The builtin back toback Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage tran- sients that may occasionally be applied from gate to source. In this respect their Zener volt- age is appropriate to achieve an efficient and costeffective intervention to protect the de- vices integrity. These integrated Zener diodes thus avoid the usage of external components.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON/OFF DrainSource Breakdown Voltage V I = 250A, V = 0 600 V (BR)DSS D GS Zero Gate Voltage Drain Current I V = Max Rating 1 A DSS DS V = Max Rating, T = +125C 50 A DS J Gate Body Leakage Current I V = 15V, V = 0 10 A GSS GS DS Gate Threshold Voltage V V = V , I = 250A 3.0 3.75 4.5 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 4.5A 0.65 0.75 DS(on) GS D Dynamic Forward Transconductance g V = 15V, I = 4.5A, Note 4 7.8 S fs DS D Input Capacitance C V = 25V, f = 1MHz, V = 0 1370 pF iss DS GS Output Capacitance C 156 pF oss Reverse Transfer Capacitance C 37 pF rss Equivalent Output Capacitance C V = 0, V = 0V to 480V, Note 5 90 pF oss eq. GS DS Total Gate Charge Q V = 480V, I = 8A, V = 10V 50 70 nC g DD D GS GateSource Charge Q 10 nC gs GateDrain Charge Q 25 nC gd Switching ON/OFF TurnOn Delay Time t 20 ns V = 300V, I = 4A, R = 4.7, d(on) DD D G VV = 10V10V GS Rise Time t 20 ns r Turn Off Delay Time t 55 ns d(off) Fall Time t 30 ns f OffVoltage Rise Time t 18 ns V = 480V, I = 8A, R = 4.7, r(Voff) DD D G VV = 10V 10V GS Fall Time t 18 ns f Crossover Time t 36 ns c SourceDrain Diode SourceDrain Current I 10 A SD SourceDrain Current, Pulsed I Note 1 36 A SDM Forward ON Voltage V I = 10A, V = 0, Note 4 1.6 V SD SD GS Reverse Recovery Time t 570 ns I = 8A, di/dt = 100A/s, rr SD VV = 40V40V, T T = +150 +150CC DD J Reverse Recovery Charge Q 4.3 C rr Reverse Recovery Current I 15 A RRM Note 1. Pulse width limited by safe operating area. Note 4. Pulsed: pulse duration = 300 s, duty cycle 1.5%. Note 5. C is defined as a constant equivalent capacitance giving the same charging time as oss eq. C when V increases from 0 to 80%. oss DS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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