NTE2995 MOSFET NChannel, Enhancement Mode High Speed Switch Features: R = 0.65 Typical DS(on) D Extremely High dv/dt Capability Gate Charge Minimized GatetoSource Zener Diode Protected G Applications: High Current, High Speed Switching Ideal for OffLine Power Supplies, Adaptor and PFC S Lighting Absolute Maximum Ratings: Drain Source Voltage (V = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V GS DS Drain Gate Voltage (R = 20k), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V GS DGR GateSource Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V GS Drain Current, I D Continuous T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A C Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Power Dissiption (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W C TOT Derate Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92W/ C GateSource ESD Voltage (HBM C = 100pF, R = 1.5k ), V . . . . . . . . . . . . . . . . . . . . . 4000V esd(GS) Peak Diode Recovery Voltage Slope (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Avalanche Current, Repetitive or Non Repetitive (Pulse Width Limited by T max), I . . . . . . . 9A J AR Single Pulse Avalanche Energy (Starting T = +25C, I = I , V = 50V), E . . . . . . . . . 300mJ J D AR DD AS Repetitive Avalanche Energy (Pulse Width Limited by T max), E . . . . . . . . . . . . . . . . . . . . . 3.5mJ J AR Minimum Gate Source Breakdown Voltage (I = 1mA, Open Drain, Note 3), V . . . . 30V GS (BR)GSO Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09 C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5 C/W thJA Lead Temperature (During Soldering), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300 C L Note 1. Pulse width limited by safe operating area. Note 2. I 10A, di/dt 200A/ s, V V , T T max. SD DD (BR)DSS J J Note 3. The builtin back toback Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage tran- sients that may occasionally be applied from gate to source. In this respect their Zener volt- age is appropriate to achieve an efficient and costeffective intervention to protect the de- vices integrity. These integrated Zener diodes thus avoid the usage of external components.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON/OFF DrainSource Breakdown Voltage V I = 250A, V = 0 600 V (BR)DSS D GS Zero Gate Voltage Drain Current I V = Max Rating 1 A DSS DS V = Max Rating, T = +125C 50 A DS J Gate Body Leakage Current I V = 15V, V = 0 10 A GSS GS DS Gate Threshold Voltage V V = V , I = 250A 3.0 3.75 4.5 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 4.5A 0.65 0.75 DS(on) GS D Dynamic Forward Transconductance g V = 15V, I = 4.5A, Note 4 7.8 S fs DS D Input Capacitance C V = 25V, f = 1MHz, V = 0 1370 pF iss DS GS Output Capacitance C 156 pF oss Reverse Transfer Capacitance C 37 pF rss Equivalent Output Capacitance C V = 0, V = 0V to 480V, Note 5 90 pF oss eq. GS DS Total Gate Charge Q V = 480V, I = 8A, V = 10V 50 70 nC g DD D GS GateSource Charge Q 10 nC gs GateDrain Charge Q 25 nC gd Switching ON/OFF TurnOn Delay Time t 20 ns V = 300V, I = 4A, R = 4.7, d(on) DD D G VV = 10V10V GS Rise Time t 20 ns r Turn Off Delay Time t 55 ns d(off) Fall Time t 30 ns f OffVoltage Rise Time t 18 ns V = 480V, I = 8A, R = 4.7, r(Voff) DD D G VV = 10V 10V GS Fall Time t 18 ns f Crossover Time t 36 ns c SourceDrain Diode SourceDrain Current I 10 A SD SourceDrain Current, Pulsed I Note 1 36 A SDM Forward ON Voltage V I = 10A, V = 0, Note 4 1.6 V SD SD GS Reverse Recovery Time t 570 ns I = 8A, di/dt = 100A/s, rr SD VV = 40V40V, T T = +150 +150CC DD J Reverse Recovery Charge Q 4.3 C rr Reverse Recovery Current I 15 A RRM Note 1. Pulse width limited by safe operating area. Note 4. Pulsed: pulse duration = 300 s, duty cycle 1.5%. Note 5. C is defined as a constant equivalent capacitance giving the same charging time as oss eq. C when V increases from 0 to 80%. oss DS
