NTE2999 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D High Speed Switching Low OnResistance No Secondary Breakdown Low Driving Power G AvalancheProof S Applications: Switching Regulators UPS (Uninterruptible Power Supply) DCDC Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ......................................................... 500V DS GateSource Voltage, V ......................................................... 35V GS Drain Current, I D Continuous ................................................................. 10A Pulsed ..................................................................... 40A Repetitive or Non Repetitive (T +150 C), I ...................................... 10A Ch AR Maximum Avalanche Energy (L = 1.42mH, V = 50V), E .......................... 77.6mJ CC AS Maximum Power Dissipation, P .................................................... 50W D Channel Temperature T ........................................................ +150 C Ch Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Thermal Resistance, Junction toCase, R .......................... 2.5 C/W thChC Maximum Thermal Resistance, Junction toAmbient, R ...................... 62.5 C/W thChA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0V 500 V (BR)DSS D GS GateSource Cutoff Voltage V I = 1mA, V = V 3.5 4.0 4.5 V GS(off) D DS GS Zero Gate Voltage Drain Current I V 500V, T = +25C 10 500 A DSS DS Ch V = 0V GS T = +125C 0.2 1.0 mA Ch GateSource Leakage Current I V = 35V, V = 0V 10 100 nA GSS GS DS DrainSource OnState Resistance R I = 5A, V = 10V 0.73 0.90 DS(on) D GS Forward Transfer Admittance g I = 5A, V = 25V 2.5 5.0 S fs D DS Rev. 914Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C V = 25V, f = 1MHz, V = 0V 950 1450 pF iss DS GS Output Capacitance C 180 270 pF oss Reverse Transfer Capacitance C 80 120 pF rss TurnOn Time t V = 300V, I = 10A, 25 40 ns d(on) CC D V = 10CV, R = 10 GS GS t 70 110 ns r TurnOff Time t 110 ns d(off) t 45 70 ns f Avalanche Capability I L = 100H, T = +25C 10 A AV Ch Diode Forward OnVoltage V I = 2x I , V = 0V, T = +25C 1.10 1.65 V SD F DR GS Ch Reverse Recovery Time t I = I , V = 0V, 450 ns rr F DR GS di/dt = 100A/s, T = +25C Ch Reverse Recovery Charge Q 5.5 C rr .181 (4.6) .126 (3.2) Dia Max Max .114 (2.9) .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max GD S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)