X-On Electronics has gained recognition as a prominent supplier of NTE2999 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2999 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2999 NTE

NTE2999 electronic component of NTE
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See Product Specifications
Part No.NTE2999
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 500V; 10A; TO220F
Datasheet: NTE2999 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 7.3705 ea
Line Total: USD 73.7 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 7.3705
50 : USD 4.3791
100 : USD 4.0449
200 : USD 3.7551
500 : USD 3.4989

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 7.854
3 : USD 7.07
4 : USD 5.138
9 : USD 4.858

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2999 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2999 and other electronic components in the MOSFETs category and beyond.

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NTE2999 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D High Speed Switching Low OnResistance No Secondary Breakdown Low Driving Power G AvalancheProof S Applications: Switching Regulators UPS (Uninterruptible Power Supply) DCDC Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ......................................................... 500V DS GateSource Voltage, V ......................................................... 35V GS Drain Current, I D Continuous ................................................................. 10A Pulsed ..................................................................... 40A Repetitive or Non Repetitive (T +150 C), I ...................................... 10A Ch AR Maximum Avalanche Energy (L = 1.42mH, V = 50V), E .......................... 77.6mJ CC AS Maximum Power Dissipation, P .................................................... 50W D Channel Temperature T ........................................................ +150 C Ch Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Thermal Resistance, Junction toCase, R .......................... 2.5 C/W thChC Maximum Thermal Resistance, Junction toAmbient, R ...................... 62.5 C/W thChA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0V 500 V (BR)DSS D GS GateSource Cutoff Voltage V I = 1mA, V = V 3.5 4.0 4.5 V GS(off) D DS GS Zero Gate Voltage Drain Current I V 500V, T = +25C 10 500 A DSS DS Ch V = 0V GS T = +125C 0.2 1.0 mA Ch GateSource Leakage Current I V = 35V, V = 0V 10 100 nA GSS GS DS DrainSource OnState Resistance R I = 5A, V = 10V 0.73 0.90 DS(on) D GS Forward Transfer Admittance g I = 5A, V = 25V 2.5 5.0 S fs D DS Rev. 914Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C V = 25V, f = 1MHz, V = 0V 950 1450 pF iss DS GS Output Capacitance C 180 270 pF oss Reverse Transfer Capacitance C 80 120 pF rss TurnOn Time t V = 300V, I = 10A, 25 40 ns d(on) CC D V = 10CV, R = 10 GS GS t 70 110 ns r TurnOff Time t 110 ns d(off) t 45 70 ns f Avalanche Capability I L = 100H, T = +25C 10 A AV Ch Diode Forward OnVoltage V I = 2x I , V = 0V, T = +25C 1.10 1.65 V SD F DR GS Ch Reverse Recovery Time t I = I , V = 0V, 450 ns rr F DR GS di/dt = 100A/s, T = +25C Ch Reverse Recovery Charge Q 5.5 C rr .181 (4.6) .126 (3.2) Dia Max Max .114 (2.9) .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max GD S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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