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FDFS6N754 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Final Datasheet August 2014 FDFS6N754 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56m Features General Description Max r = 56m at V = 0V, I = 4A DS(on) GS D The FDFS6N754 combines the exceptional performance of Fairchild s PowerTrench MOSFET technology with a very Max r = 75m at V = 4.5V, I = 3.5A DS(on) GS D low forward voltage drop Schottky barrier rectifier in an SO- 8 package. V < 0.45V 2A F This device is designed specifically as a single package V < 0.28V 100mA F solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state Schottky and MOSFET incorporated into single power resistance. The independently connected Schottky diode surface mount SO-8 package allows its use in a variety of DC/DC converter topologies. Electrically independent Schottky and MOSFET pinout Applications for design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Miller Charge D D A 1 8 C C C 2 7 A C S 3 6 D G SO-8 S G 4 5 D A Pin 1 A MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Note 1a) 4 I A D -Pulsed 20 Power Dissipation for Dual Operation 2 P W D Power Dissipation for Single Operation (Note 1a) 1.6 V Schottky Repetitive Peak Reverse Voltage 30 V RRM I Schottky Average Forward Current (Note 1a) 2 A O T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDFS6N754 FDFS6N754 SO-8 330mm 12mm 2500 units 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDFS6N754 Rev. A1