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FDG410NZ Single N-Channel PowerTrench MOSFET March 2009 FDG410NZ Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m Features General Description This N-Channel MOSFET has been designed specifically to Max r = 70 m at V = 4.5 V, I = 2.2 A DS(on) GS D improve the overall efficiency of DC/DC converters using either Max r = 77 m at V = 2.5 V, I = 2.0 A DS(on) GS D synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an Max r = 87 m at V = 1.8 V, I = 1.8 A DS(on) GS D extremely low r and gate charge (Q ) in a small package. DS(on) g Max r = 115 m at V = 1.5 V, I = 1.5 A DS(on) GS D Applications HBM ESD protection level > 2 kV (Note 3) DC/DC converter High performance trench technology for extremely low r DS(on) Power management High power and current handling capability Load switch Fast switching speed Low gate charge RoHS Compliant S D 6 D D 1 D D 2 D 5 G D 3 4 S G D SC70-6 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25 C (Note 1a) 2.2 A I A D -Pulsed 6.0 Power Dissipation T = 25 C (Note 1a) 0.42 A P W D Power Dissipation T = 25 C (Note 1b) 0.38 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 300 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 333 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .41 FDG410NZ SC70-6 7 8 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDG410NZ Rev .B