X-On Electronics has gained recognition as a prominent supplier of FDG312P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDG312P MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDG312P ON Semiconductor

FDG312P electronic component of ON Semiconductor
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See Product Specifications
Part No.FDG312P
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.75W; SC70-6
Datasheet: FDG312P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4371
10 : USD 0.377
25 : USD 0.3518
100 : USD 0.2614
500 : USD 0.204
1000 : USD 0.1659
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4532
10 : USD 0.3909
25 : USD 0.3648
100 : USD 0.271
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MOQ : 3000
Multiples : 3000
3000 : USD 0.1491
6000 : USD 0.1347
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Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1172
6000 : USD 0.1125
12000 : USD 0.1125
15000 : USD 0.1125
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Obsolete
0
MOQ : 1985
Multiples : 1985
1985 : USD 0.2052
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0
MOQ : 1
Multiples : 1
1 : USD 0.732
10 : USD 0.5882
100 : USD 0.183
500 : USD 0.1548
1000 : USD 0.1401
3000 : USD 0.1255
9000 : USD 0.1255
24000 : USD 0.1234
45000 : USD 0.1202
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 0.1585
25 : USD 0.1368
52 : USD 0.0983
244 : USD 0.0944
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Obsolete
0
MOQ : 58
Multiples : 58
58 : USD 0.2244
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Obsolete
0
MOQ : 58
Multiples : 58
58 : USD 0.2249
100 : USD 0.1892
250 : USD 0.1319
500 : USD 0.1293
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Obsolete
0
MOQ : 58
Multiples : 58
58 : USD 0.2249
100 : USD 0.1892
250 : USD 0.1319
500 : USD 0.1293
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1041
6000 : USD 0.1
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the FDG312P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG312P and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG312P FDG312P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using ON -1.2 A, -20 V. R = 0.18 V = -4.5 V DS(on) GS Semiconductor s advanced PowerTrench process that R = 0.25 V = -2.5 V. has been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior switching performance. These devices are Low gate charge (3.3 nC typical). well suited for portable electronics applications. High performance trench technology for extremely low R . Applications DS(ON) Load switch Compact industry standard SC70-6 surface mount Battery protection package. Power management S 1 6 D D 2 5 G D 33 4 D SC70-6 T = 25C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS I Drain Current - Continuous (Note 1) -1.2 A D - Pulsed -6 P Power Dissipation for Single Operation (Note 1a) 0.75 W D (Note 1b) 0.55 (Note 1c) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 260 C/W JA Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDG312P 7 8mm 3000 units .12 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDG312P/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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