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FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode July 2014 FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package 2.9 A, 30 V R = 123 m V = 4.5 V DS(ON) GS solution for a boost topology in cellular handset and R = 140 m V = 3.0 V DS(ON) GS other ultra-portable applications. It features a MOSFET = 163 m V = 2.5 V RDS(ON) GS with low input capacitance, total gate charge and on- Schottky: state resistance, and an independently connected V < 0.46 V 500mA F schottky diode with low forward voltage and reverse Low profile 0.8 mm maximum in the new package leakage current to maximize boost efficiency. MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal ) HBM ESD protection level = 1.8kV typical (Note 3 performance for its physical size and is well suited to RoHS Compliant switching and linear mode applications. PIN 1 A NC D 1 6 A K K D 2 5 NC G 3 D 4 S K G S MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 12 V GS I Drain Current Continuous (T = 25C, V = 4.5V) 2.9 D C GS Continuous (T = 25C, V = 2.5V) 2.7 A C GS Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 1.5 D W Power Dissipation for Single Operation (Note 1b) 0.65 T , T Operating and Storage Temperature 55 to +150 J STG C V Schottky Repetitive Peak Reverse Voltage 28 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 83 R JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 193 JA C/W Thermal Resistance, Junction-to-Ambient (Note 1c) 101 R JA Thermal Resistance, Junction-to-Ambient (Note 1d) 228 R JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 109 FDFMA3N109 7 8mm 3000 units FDFMA3N109 Rev B3 2008 Fairchild Semiconductor Corporation