FDFMA3P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode July 2014 FDFMA3P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode 30 V, 3.3 A, 87 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max r = 87 m at V = 10 V, I = 3.3 A DS(on) GS D ultra-portable applications. It features a MOSFET with very low Max r = 152 m at V = 4.5 V, I = 2.3 A on-state resistance and an independently connected low forward DS(on) GS D voltage schottky diode allows for minimum conduction losses. HBM ESD protection level > 2 KV typical (Note 3) The MicroFET 2X2 package offers exceptional thermal Schottky performance for its physical size and is well suited to linear mode V < 0.37 V 500 mA applications. F Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant PIN 1 ANC D 6 C A 1 CD 5 2 G NC 4 D 3 S CG S Top Bottom MicroFET 2x2 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous (Note 1a) 3.3 I A D -Pulsed -15 Power Dissipation (Note 1a) 1.4 P W D (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current 2 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 JA R Thermal Resistance, Junction to Ambient (Note 1b) 173 JA C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 JA R Thermal Resistance, Junction to Ambient (Note 1d) 173 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 3P2 FDFMA3P029Z MicroFET 2X2 7 8 mm 3000 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDFMA3P029Z Rev.C2 FDFMA3P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250 A, referenced to 25 C 22 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 1.3 1.9 2.3 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250 A, referenced to 25 C 5 mV/C D T Temperature Coefficient J V = 10 V, I = 3.3 A 69 87 GS D V = 4.5 V, I = 2.3 A 108 152 GS D r Static Drain to Source On-Resistance m DS(on) V = 10 V, I = 3.3 A, GS D 97 122 T =125 C J g Forward Transconductance V = 5 V, I = 3.3 A 6 S FS DS D R Gate Resistance 12 g Dynamic Characteristics C Input Capacitance 324 435 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance 59 80 pF oss f = 1 MHz C Reverse Transfer Capacitance 53 80 pF rss Switching Characteristics t Turn-On Delay Time 5.2 11 ns d(on) V = 15 V, I = 3.3 A DD D t Rise Time 310 ns r V = 10 V, R = 6 GS GEN t Turn-Off Delay Time 17 31 ns d(off) t Fall Time 11 25 ns f Total Gate Charge V = 0 V to 10 V 7.2 10 nC GS Q g(TOT) Total Gate Charge V = 0 V to 5 V 4.1 6 V = 15 V, GS DD I = 3.3 A Q Gate to Source Gate Charge 1.0 nC D gs Q Gate to Drain Miller Charge 1.9 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0 V, I = 3.3 A (Note 2) 0.94 1.3 V SD GS S t Reverse Recovery Time 20 32 ns rr I = 3.3 A, di/dt = 100 A/s F Q Reverse Recovery Charge 10 18 nC rr Schottky Diode Characteristics V Reverse Voltage I = 1 mA T = 25 C 20 V R R J T = 25 C 30 300 A J I Reverse Leakage V = 20 V R R T = 125 C 10 45 mA J T = 25 C 0.32 0.37 J I = 500 mA F T = 125 C 0.21 0.26 J V Forward Voltage V F T = 25 C 0.37 0.435 J I = 1 A F T = 125 C 0.28 0.33 J www.fairchildsemi.com 2 2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C2