FDMA8051L MOSFET, Single N-Channel, POWERTRENCH 40 V, 10 A, 14 m General Description www.onsemi.com This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low ELECTRICAL CONNECTION r and gate charge provide excellent switching performance. DS(on) Bottom Drain Contact Features D D Max r = 14 m at V = 10 V, I = 10 A DS(on) GS D D D Max r = 18 m at V = 4.5 V, I = 8.5 A DS(on) GS D Low Profile 0.8 mm maximum in the new package MicroFET G S 2 x 2 mm Free from halogenated compounds and antimony oxides Single N-Channel MOSFET RoHS Compliant Application Pin 1 D G D DCDC Buck Converters Drain Source MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit D S D V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V MicroFET 2x2 GS (WDFN6 2x2, 0.65P) I Drain Current Continuous T = 25C 10 A D A CASE 511DB (Note 1a) Pulsed (Note 3) 80 MARKING DIAGRAM P Power dissipation T = 25C (Note 1a) 2.4 W D A Power dissipation T = 25C (Note 1b) 0.9 A &Z&2&K 051 T Operating and Storage Junction Temperature 55 to C J, T Range +150 STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Z = Assembly Plant Code &2 = Numeric Date Code THERMAL CHARACTERISTICS &K = Lot Code Symbol Parameter Ratings Unit 051 = Specific Device Code R Thermal Resistance, Junction to Ambient 52 C/W JA (Note 1a) ORDERING INFORMATION See detailed ordering and shipping information on page 1 R Thermal Resistance, Junction to Ambient 145 JA of this data sheet. (Note 1b) PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping 051 FDMA8051L MicroFET 2x2 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2018 Rev. 3 FDMA8051L/DFDMA8051L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 40 V DSS D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C 22 BV D DSS mV/C Coefficient T J I Zero Gate Voltage Drain Current V = 32 V, V = 0 V 1 A DSS DS GS I GatetoSource Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage 1.0 1.6 3.0 V V = V , I = 250 A GS(th) GS DS D Gate to Source Threshold Voltage I = 250 A, referenced to 25C 5 V D GS(th) mV/C Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 10 A 11 14 m DS(on) GS D V = 4.5 V, I = 8.5 A 14 18 GS D V = 10 V, I = 10 A, T = 125C 15 19 GS D J g Forward Transconductance V = 5 V, I = 10 A 35 S FS DD D DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1MHz 901 1260 iss DS GS C Output Capacitance 251 350 oss pF C Reverse Transfer Capacitance 16 25 rss R Gate Resistance 0.1 0.6 1.8 g SWITCHING CHARACTERISTICS td Turn On Delay Time V = 20 V, I = 10 A, 6.4 13 ns (on) DD D V = 10 V, R = 6 GS GEN t Rise Time 1.8 10 r t Turn Off Delay Time 17 31 D(off) t Fall Time 1.8 10 f Q Total Gate Charge V = 0V to 10 V 14 20 nC g GS Q Total Gate Charge 6.4 9.0 g V = 0V to 4.5 V GS V = 20 V, DD Q Total Gate Charge 2.4 3.7 gs i = 10 A D Q Gate to Source Charge 1.8 2.5 gd DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward Voltage V = 0 V, I = 2 A (Note 2) 0.7 1.2 V SD GS S V = 0 V, I = 10 A (Note 2) 0.8 1.2 GS S t Reverse Recovery Time I = 10 A, di/dt = 100 A/ s 23 37 ns rr F Q Reverse Recovery Charge 6.7 14 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2