FDMA8884 N-Channel Power Trench MOSFET May 2014 FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max r = 23 m at V = 10 V, I = 6.5 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced Power Trench process that has Max r = 30 m at V = 4.5 V, I = 6.0 A DS(on) GS D been optimized for r switching performance. DS(on) High performance trench technology for extremely low r DS(on) Fast switching speed Application RoHS Compliant Primary Switch Pin 1 G D D Bottom Drain Contact D D Drain Source D D G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 3) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 8.0 C I -Continuous T = 25 C (Note 1a) 6.5 A D A -Pulsed 25 Power Dissipation (Note 1a) 1.9 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 180 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 884 FDMA8884 MicroFET 2x2 7 8 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMA8884 Rev.C5 FDMA8884 N-Channel Power Trench MOSFET Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250 A, referenced to 25 C 15 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A1.21.83.0V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250 A, referenced to 25 C -5 mV/C D T Temperature Coefficient J V = 10 V, I = 6.5 A 19 23 GS D r Static Drain to Source On Resistance V = 4.5 V, I = 6.0 A 25 30 m DS(on) GS D V = 10 V, I = 6.5 A, T = 125 C 25 30 GS D J g Forward Transconductance V = 5 V, I = 6.5 A 26 S FS DD D Dynamic Characteristics C Input Capacitance 339 450 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance 132 175 pF oss f = 1 MHz C Reverse Transfer Capacitance 18 28 pF rss R Gate Resistance 1.1 g Switching Characteristics t Turn-On Delay Time 510 ns d(on) t Rise Time 110 ns V = 15 V, I = 6.5 A, r DD D V = 10 V, R = 6 t Turn-Off Delay Time 11 20 ns GS GEN d(off) t Fall Time 110 ns f Total Gate Charge V = 0 V to 10 V 5.4 7.5 nC GS Q g(TOT) Total Gate Charge V = 0 V to 4.5 V 2.7 3.7 nC V = 15 V GS DD I = 6.5 A Q Total Gate Charge 1.0 nC D gs Q Gate to Drain Miller Charge 0.9 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0 V, I = 6.5 A (Note 2) 0.86 1.2 V SD GS S t Reverse Recovery Time 16 28 ns rr I = 6.5 A, di/dt = 100 A/s F Q Reverse Recovery Charge 4 10 nC rr NOTES: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. JA R is guaranteed by design while R is determined by the user s board design. JC CA a. 65 C/W when mounted b. 180 C/W when mounted on a 2 on a 1 in pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMA8884 Rev.C5