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FDMC7660S N-Channel Power Trench SyncFET January 2014 FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 m Features General Description Max r = 2.2 m at V = 10 V, I = 20 A The FDMC7660S has been designed to minimize losses in DS(on) GS D power conversion applications. Advancements in both silicon Max r = 2.95 m at V = 4.5 V, I = 18 A DS(on) GS D and package technologies have been combined to offer the High performance technology for extremely low r lowest r while maintaining excellent switching DS(on) DS(on) performance. This device has the added benefit of an efficient Termination is Lead-free and RoHS Compliant monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D G 5 4 S G D S 6 3 S D 7 2 D D D D 8 1 S D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 40 C -Continuous (Silicon limited) T = 25 C 100 C I A D -Continuous T = 25 C (Note 1a) 20 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 128 mJ AS Power Dissipation 41 P W D Power Dissipation (Note 1a) 2.3 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7660S FDMC7660S Power 33 13 12 mm 3000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMC7660S Rev.C1