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FDMC7664 N-Channel PowerTrench MOSFET June 2014 FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 4.2 m at V = 10 V, I = 18.8 A DS(on) GS D Semiconductors advanced Power Trench process that has Max r = 5.5 m at V = 4.5 V, I = 16.1 A DS(on) GS D been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching High performance technology for extremely low r DS(on) applications common in Notebook Computers and Portable Termination is Lead-free and RoHS Compliant Battery Packs. Applications DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom D 5 4 G Pin 1 G S D 6 3 S S S S D 7 2 D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 24 C I -Continuous T = 25 C (Note 1a) 18.8 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 188 mJ AS Power Dissipation T = 25 C 45 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7664 FDMC7664 MLP 3.3x3.3 13 12 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC7664 Rev.C4