FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET November 2013 FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max r = 103 m at V = 10 V, I = 3.3 A DS(on) GS D that incorporates Shielded Gate technology. This process has Max r = 153 m at V = 4.5 V, I = 2.7 A been optimized for the on-state resistance and yet maintain DS(on) GS D superior switching performance. G-S zener has been added to HBM ESD protection level > 3 KV typical (Note 4) enhance ESD voltage level. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top D D D D 8 7 6 5 S D S D D S D G G S S S 1 3 2 4 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25 C 7.5 C -Continuous (Silicon limited) T = 25 C 9.6 C I A D -Continuous T = 25 C (Note 1a) 3.3 A -Pulsed 15 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS Power Dissipation T = 25 C 19 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 6.5 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86106Z FDMC86106LZ Power 33 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86106LZ Rev.C2 FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250 A, referenced to 25 C 73 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 10 A GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 1.0 1.8 2.2 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250 A, referenced to 25 C -6 mV/C D T Temperature Coefficient J V = 10 V, I = 3.3 A 79 103 GS D r Static Drain to Source On Resistance V = 4.5 V, I = 2.7 A 105 153 m DS(on) GS D V = 10 V, I = 3.3 A, T = 125 C 136 178 GS D J g Forward Transconductance V = 5 V, I = 3.3 A 11 S FS DS D Dynamic Characteristics C Input Capacitance 232 310 pF iss V = 50 V, V = 0 V, DS GS C Output Capacitance 45 60 pF oss f = 1 MHz C Reverse Transfer Capacitance 2.4 5 pF rss R Gate Resistance 0.7 g Switching Characteristics t Turn-On Delay Time 4.5 10 ns d(on) t Rise Time 1.3 10 ns V = 50 V, I = 3.3 A, r DD D V = 10 V, R = 6 t Turn-Off Delay Time 10 20 ns GS GEN d(off) t Fall Time 1.4 10 ns f Q Total Gate Charge V = 0 V to 10 V 46 nC g(TOT) GS V = 50 V, DD Q Total Gate Charge V = 0 V to 4.5 V 2 3 nC g(TOT) GS I = 3.3 A D Q Total Gate Charge 0.8 nC gs Q Gate to Drain Miller Charge 0.7 nC gd Drain-Source Diode Characteristics V = 0 V, I = 3.3 A (Note 2) 0.85 1.3 GS S V Source to Drain Diode Forward Voltage V SD V = 0 V, I = 2 A (Note 2) 0.82 1.2 GS S t Reverse Recovery Time 33 54 ns rr I = 3.3 A, di/dt = 100 A/s F Q Reverse Recovery Charge 23 38 nC rr NOTES: 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R is guaranteed by design while R is determined by JA JC CA the user s board design. b. 125 C/W when mounted on a. 53 C/W when mounted on a a minimum pad of 2 oz copper 2 1 in pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting T = 25 C N-ch: L = 1.0 mH, I = 5.0 A, V = 90 V, V = 10 V. J AS DD GS 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDMC86106LZ Rev.C2