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FDMC86265P P-Channel PowerTrench MOSFET August 2016 FDMC86265P P-Channel PowerTrench MOSFET -150 V, -2.6 A, 1.2 Features General Description Max r = 1.2 at V = -10 V, I = -1 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that Max r = 1.4 at V = -6 V, I = -0.9 A DS(on) GS D has been optimized for the on-state resistance and yet maintain Very Low RDS-on Mid Voltage P-channel Silicon Technology superior switching performance. Optimised for Low Qg This product is optimised for fast switching applications as Applications well as load switch applications. Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant Bottom Top S D Pin 1 G S S S D S S D D D D G D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C (Note 5) -2.6 C -Continuous T = 100 C (Note 5) -1.65 C I A D -Continuous T = 25 C (Note 1a) -1 A -Pulsed (Note 4) -9 E Single Pulse Avalanche Energy (Note 3) 6 mJ AS Power Dissipation T = 25 C 16 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 7.5 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86265P FDMC86265P Power 33 13 12 mm 3000 units 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86265P Rev.1.3