FDMC8676 N-Channel PowerTrench MOSFET December 2007 FDMC8676 tm N-Channel PowerTrench MOSFET 30V, 18A, 5.9m Features General Description Max r = 5.9m at V = 10V, I = 14.7A This device has been designed specifically to improve the DS(on) GS D efficiency of DC/DC converters. Using new techniques in Max r = 9.3m at V = 4.5V, I = 11.5A DS(on) GS D MOSFET construction, the various components of gate charge Low Profile - 1mm max in Power 33 and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable RoHS Compliant excellent performance with both adaptive and fixed dead time gate drive circuits. Very low r has been maintained to DS(on) provide an extremely versatile device. Applications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of load Top Bottom Pin 1 S D 5 4 G S S G D 6 S 3 D 7 2 S D D 8 1 S D D D Power 33 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C 18 C -Continuous (Silicon limited) T = 25C 66 C I A D -Continuous T = 25C (Note 1a) 16 A -Pulsed 60 Power Dissipation T = 25C 41 C P W D Power Dissipation T = 25C (Note 1a) 2.3 A E Single Pulse Avalanche Energy (Note 3) 216 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8676 FDMC8676 Power 33 13 12mm 3000units 1 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMC8676 Rev.C FDMC8676 N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250A, V = 0V 30 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250A, referenced to 25C 32 mV/C D T Coefficient J V = 24V, 1 DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 100 GS J I Gate to Source Leakage Current V = 20V, V = 0V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 1.0 1.8 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250A, referenced to 25C -5 mV/C D T Temperature Coefficient J V = 10V, I = 14.7A 4.7 5.9 GS D r Static Drain to Source On Resistance V = 4.5V, I = 11.5A 7.1 9.3 m DS(on) GS D V =10V, I = 14.7A, T = 125C 6.8 9.1 GS D J g Forward Transconductance V = 5V, I = 14.7A 56 S FS DD D Dynamic Characteristics C Input Capacitance 1455 1935 pF iss V = 15V, V = 0V, DS GS C Output Capacitance 760 1010 pF oss f = 1MHz C Reverse Transfer Capacitance 105 155 pF rss R Gate Resistance f = 1MHz 0.8 g Switching Characteristics t Turn-On Delay Time 9 19 ns d(on) t Rise Time 3 10 ns V = 15V, I = 14.7A, r DD D V = 10V, R = 6 t Turn-Off Delay Time 22 36 ns GS GEN d(off) t Fall Time 2 10 ns f Q Total Gate Charge V = 0V to 10V 21 30 nC g GS Q Total Gate Charge V = 0V to 4.5V 10 14 nC V = 15V, g GS DD I = 14.7A Q Gate to Source Charge 4 nC D gs Q Gate to Drain Miller Charge 3 nC gd Drain-Source Diode Characteristics V = 0V, I = 14.7A (Note 2) 0.8 1.3 GS S V Source to Drain Diode Forward Voltage V SD V = 0V, I = 1.7A (Note 2) 0.7 1.2 GS S t Reverse Recovery Time 33 53 ns rr I = 14.7A, di/dt = 100A/s F Q Reverse Recovery Charge 17 31 nC rr NOTES: 2 1. R is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R is guaranteed by design while R is determined by JA JC CA the user s board design. 2 b. 125C/W when mounted on a a. 53C/W when mounted on a 1 in minimum pad of 2 oz copper pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. o 3. Starting T = 25 C N-ch: L =3mH, I = 12A, V = 30V, V = 10V J AS DD GS 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDMC8676 Rev.C