FDMC8878 N-Channel POWERTRENCH MOSFET 30 V, 16.5 A, 14 m This N Channel MOSFET is a rugged gate version of ONSemiconductors advanced PowerTrench process. It has been www.onsemi.com optimized for power management applications. Features D R = 14 m (Max.) V = 10 V, I = 9.6 A DS(on) GS D R = 17 m (Max.) V = 4.5 V, I = 8.7 A DS(on) GS D Low Profile 0.8 mm Max in MLP 3.3 x 3.3 These Devices are PbFree and are RoHS Compliant G Application DC DC Conversion S MAXIMUM RATINGS (T = 25C unless otherwise noted) A Parameter Symbol Value Unit DraintoSource Voltage V 30 V DS GatetoSource Voltage V 20 V GS Continuous Drain Current T = 25C I 16.5 A C D (Package limited) WDFN8 T = 25C 38 C CASE 511DH (Silicon limited) T = 25C 9.6 A (Figure 1) Drain Current Pulsed I 60 A D G D 5 4 Power Dissipation P W T = 25C 31 C D T = 25C 2.1 A D S 6 3 (Figure 1) Operating and Storage Junction Temperature T , T 55 to C D 7 2 S J STG Range +150 D S 8 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information on Thermal Resistance, JunctiontoCase R 4 C/W page 1 of this data sheet. JC Thermal Resistance, JunctiontoAmbient R 60 JA (Figure 1) PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Quantity FDMC8878 FDMC8878 MLP 3.3 x 3.3 13 12 mm 3000 units Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2018 Rev. 5 FDMC8878/DFDMC8878 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25C 20 mV/C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS V = 24 V, V = 0 V, T = 125C 100 DS GS J I GatetoSource Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V GatetoSource Breakdown Voltage I = 250 A, V = V 1 1.7 3 V GS(th) D GS DS BV / T GatetoSource Threshold Voltage I = 250 A, Referenced to 25C 5.7 mV/C DSS J D Temperature Coefficient R DraintoSource On Resistance V = 10 V, I = 9.6 A 9.6 14.0 m DS(on) GS D V = 4.5 V, I = 8.7 A 12.1 17.0 GS D V = 10 V, I = 9.6 A, T = 125C 13.5 20.0 GS D J g Forward Transconductance V = 5 V, I = 9.6 A 35 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, f = 1 MHz 1000 1230 pF iss DS GS C Output Capacitance 183 255 pF oss C Reverse Transfer Capacitance 118 180 pF rss R Reverse Transfer Capacitance f = 1 MHz 1.1 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 9.6 A, 8 16 ns d(on) DD D V = 10 V R = 6 GS GEN t Rise Time 4 10 r t TurnOff Delay Time 20 36 d(off) t Fall Time 3 10 f Q Total Gate Charge V = 10 V, V = 15 V, 18 26 nC g(tot) GS DD I = 9.6 A D Q GatetoSource Gate Charge 2.8 gs Q GatetoDrain Miller Charge 3.9 gd DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Forward Voltage V = 0 V, I = 9.6 A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time I = 9.6 A, 23 35 ns rr F di/dt = 100 A/ s Q Reverse Recovery Charge 14 21 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. CA a. 60C/W when mounted on b. 135C/W when mounted on a 2 a 1 in pad of 2 oz copper minimum pad of 2 oz copper Figure 1. Figure 2. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. www.onsemi.com 2