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FDMD8680 Dual N-Channel PowerTrench MOSFET May 2016 FDMD8680 Dual N-Channel PowerTrench MOSFET 80 V, 66 A, 4.7 m Features General Description Common Source Configuration to Eliminate PCB Routing This package integrates two N-Channel devices connected internally in common-source configuration. This enables very Large Source Pad on Bottom of Package for Enhanced low package parasitics and optimized thermal path to the Thermals common source pad on the bottom. Provides a very small Max r = 4.7 m at V = 10 V, I = 16 A DS(on) GS D footprint (5 x 6 mm) for higher power density. Max r = 6.4 m at V = 8 V, I = 14 A DS(on) GS D Applications Ideal for Flexible Layout in Secondary Side Synchronous Isolated DC-DC Synchronous Rectifiers Rectification Common Ground Load Switches 100% UIL Tested Termination is Lead-free and RoHS Compliant Top Bottom Pin 1 G1 D1 Pin 1 1 D2 G1 8 D1 D1 D2 D1 2 7 S1 / S2 D2 D1 3 6 D2 D2 D1 4 5 G2 D2 S1,S2 to backside G2 Power 5 x 6 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 66 C -Continuous T = 100 C (Note 5) 42 C I A D -Continuous T = 25 C (Note 1a) 16 A -Pulsed (Note 4) 487 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25 C 39 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMD8680 FDMD8680 Power 5 x 6 13 12 mm 3000 units 1 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMD8680 Rev.1.0